Basf Se Corporation

Universiteit Gent

Other

Imec

Imec Vzw

Ghent University

Michiels Group

Isabel Van Driessche

Michael Baecker

Katrien De Keukeleere

Jonathan De Roo

Hens Zeger

Serge Hoste

Mikhail Rodionovich Baklanov

Matthias Maier

Maximilian Hemgesberg

Till Gruendling

Matthias Ide

Michael Bäcker

Ron Feenstra

Denis Schwall

Pascal Van Der Voort

Hannes Rijckaert

Frans Persyn

Pieter Vermeir

Frederik Goethals

Jan Bennewitz

Thorsten Martin Staudt

Klaartje De Buysser

Matthias Van Zele

Thorsten Staudt

The present invention is in the field of nanoparticles, their preparation and their use as pinning centers in superconductors. In particular the present invention relates to nanoparticles comprising an oxide of Sr, Ba, Y, La, Ti, Zr, Hf, Nb, or Ta, wherein the nanoparticles have a weight average diameter of 1 to 30 nm and wherein an organic compound of general formula (I), (II) or (III) or an organic compound containing at least two carboxylic acid groups on the surface of the nanoparticles (I) (II) (III) wherein a is 0 to 5, b and c are independent of each other 1 to 14, n is 1 to 5, f is 0 to 5, p and q are independent of each other 1 to 14, and e and f are independent of each other 0 to 12. 

Nanoparticles for the use as pinning centers in superconductors

The present invention is in the field of processes for the production of tantalum oxide particles. In particular the present invention relates to a process for producing crystalline tantalum oxide nanoparticles comprising heating a water-free solution containing (a) a tantalum alkoxide, (b) an acid, and (c) a solvent.

Process for producing crystalline tantalum oxide particles

A method for at least partially sealing a porous material is provided, comprising forming a sealing layer onto the porous material by applying a sealing compound comprising oligomers wherein the oligomers are formed by ageing a precursor solution comprising cyclic carbon bridged organosilica and/or bridged organosilanes. The method is especially designed for low k dielectric porous materials to be incorporated into semiconductor devices.

Sealed porous materials, methods for making them, and semiconductor devices comprising them

The invention relates to a method for the wet chemical production of an HTSL on a carrier, wherein an HTSL precursor solution comprising no trifluoroacetate may be utilized if the same is heated to a temperature Tduring the heat treatment of the HTSL precursor, wherein the remaining substances of the HTSL precursor solution form at least a partial melt, which is below the temperature at which REBaCuOis formed, and which is deposited from the liquid phase while forming a peritectic.

Wet-chemical method for producing high-temperature superconductor

A method and an apparatus for spraying materials onto a substrate to produce a coating thereon is described which allows very thick layers of complex metal oxides to be produced. The apparatus and method are particularly suitable for producing superconducting coatings.

Spraying method to form a thick coating and products obtained

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Waasmunster, Belgium

Isabel Van Driessche