Jordan Valley Applied Radiation Ltd.

Bruker Jv Israel Ltd.

Jordan Valley Semiconductors Ltd.

Kla Instruments Corporation

Jordan Valley Semiconductor Ltd

Sela Semiconductor Engineering Laboratories Ltd.

Jordan Valley Semiconductord Ltd

Jordon Valley Applied Radiation, Ltd.

Isaac Mazor

Boris Yokhin

David Berman

Amos Gvirtzman

Matthew Wormington

Alex Dikopoltsev

Alex Tokar

Tzachi Rafaeli

Asher Peled

Alexander Dikopoltsev

Dileep Kumar Agnihotri

Alexander Krohmal

Gennady Openganden

Kalman Kaufman

Long Vu

Yoram Uziel

Alexander Krokhmal

Mark Davidson

Dan Vilenski

David Bar-On

Yuri Vinshtein

Alex Krokhmal

Nikolai Kasper

Alexander Tokar

Noam Knoll

Colin Smith

Elik Chen

Ayelet Dag

Bagrat Khachatryan

Jeremy O'Dell

Alex Brandt

Fouad Atrash

Moshe Beylin

Olga Ostrovsky

Sean Jameson

Ami Dovrat

Reuven Duer

Apparatus for X-ray scatterometry includes an X-ray source, which directs an X-ray beam to be incident at a grazing angle on an area of a surface of a sample, and an X-ray detector measures X-rays scattered from the area. A knife edge is arranged parallel to the surface of the sample in a location adjacent to the area so as to define a gap between the surface and the knife edge and to block a portion of the X-ray beam that does not pass through the gap. A motor moves the knife edge perpendicular to the surface so as to control a size of the gap. An optical rangefinder receives optical radiation reflected from the surface and outputs a signal indicative of a distance of the knife edge from the surface. Control circuitry drives the motor responsively to the signal in order to regulate the size of the gap.

Closed-loop control of X-ray knife edge

A method for X-ray measurement includes, in a calibration phase, scanning a first X-ray beam, having a first beam profile, across a feature of interest on a calibration sample and measuring first X-ray fluorescence (XRF) emitted from the feature and from background areas of the calibration sample surrounding the feature. Responsively to the first XRF and the first beam profile, a relative emission factor is computed. In a test phase, a second X-ray beam, having a second beam profile, different from the first beam profile, is directed to impinge on the feature of interest on a test sample and second XRF emitted from the test sample is measured in response to the second X-ray beam. A property of the feature of interest on the test sample is computed by applying the relative emission factor together with the second beam profile to the measured second XRF.

Measurement of small features using XRF

An apparatus includes an X-ray tube, X-ray optics, one or more coils and control circuitry. The X-ray tube is configured to direct an electron beam onto an anode so as to emit an X-ray beam. The X-ray optics which configured to receive the X-ray beam emitted from the X-ray tube and to direct the X-ray beam onto a target. The coils are configured to steer the electron beam in the X-ray tube using electrical currents flowing through the coils. The control circuitry is configured to compensate for misalignment between the X-ray tube and the X-ray optics by analyzing the X-ray beam output by the X-ray optics, and setting the electrical currents based on the analyzed X-ray beam.

X-ray source assembly

A method for X-ray Fluorescence (XRF) analysis includes directing an X-ray beam onto a sample and measuring an XRF signal excited from the sample, in a reference measurement in which the sample includes one or more first layers formed on a substrate, and in a target measurement after one or more second layers are formed on the substrate in addition to the first layers, so as to produce a reference XRF spectrum and a target XRF spectrum, respectively. A contribution of the first layers to the target XRF spectrum is reduced using the reference XRF spectrum. A parameter of at least one of the second layers is estimated using the target XRF spectrum in which the contribution of the first layers has been reduced.

Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF

Apparatus, including a sample-support that retains a sample in a plane having an axis, the plane defining first and second regions separated by the plane. A source-mount in the first region rotates about the axis, and an X-ray source on the source-mount directs first and second incident beams of X-rays to impinge on the sample at first and second angles along beam axes that are orthogonal to the axis. A detector-mount in the second region moves in a plane orthogonal to the axis and an X-ray detector on the detector-mount receives first and second diffracted beams of X-rays transmitted through the sample in response to the first and second incident beams, and outputs first and second signals, respectively, in response to the received first and second diffracted beams. A processor analyzes the first and the second signals so as to determine a profile of a surface of the sample.

X-ray scatterometry apparatus

A method includes directing an X-ray beam to be incident at a grazing angle on a location on a surface of the sample. An X-ray fluorescence excited at the location is measured. A reflection angle of the X-ray beam from the surface and a transmission angle of the X-ray beam are measured. An angle of incidence of the X-ray beam on the surface is evaluated using the measured reflection and transmission angles, and the measured X-ray fluorescence is analyzed using the evaluated angle of incidence.

Angle calibration for grazing-incidence X-ray fluorescence (GIXRF)

A method for inspection includes capturing an optical image of one or more features on a surface of a sample and irradiating an area of the sample containing at least one of the features with an X-ray beam. An intensity of X-ray fluorescence emitted from the sample in response to the irradiating X-ray beam is measured. The optical image is processed so as to extract geometrical parameters of the at least one of the features and to compute a correction factor responsively to the geometrical parameters. The correction factor is applied to the measured intensity in order to derive a property of the at least one of the features.

Estimation of XRF intensity from an array of micro-bumps

A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap.

X-ray inspection of bumps on a semiconductor substrate

A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.

High-resolution X-ray diffraction measurement with enhanced sensitivity

Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.

Combining X-ray and VUV analysis of thin film layers

A method for inspection of a sample includes directing an excitation beam to impinge on an area of a planar sample that includes a feature having sidewalls perpendicular to a plane of the sample, the sidewalls having a thin film thereon. An intensity of X-ray fluorescence (XRF) emitted from the sample responsively to the excitation beam is measured, and a thickness of the thin film on the sidewalls is assessed based on the intensity. In another method, the width of recesses in a surface layer of a sample and the thickness of a material deposited in the recesses after polishing are assessed using XRF.

Accurate measurement of layer dimensions using XRF

A method for inspection includes irradiating a sample using an X-ray beam, which is focused so as to define a spot on a surface of the sample. At least one of the sample and the X-ray beam is shifted so as to scan the spot along a scan path that crosses a feature on the surface. Respective intensities of X-ray fluorescence emitted from the sample responsively to the X-ray beam are measured at a plurality of locations along the scan path, at which the spot has different, respective degrees of overlap with the feature. The intensities measured at the plurality of the locations are processed in order to compute an adjusted value of the emitted X-ray fluorescence over the scan path. A thickness of the feature is estimated based on the adjusted value.

Inspection of small features using X-ray fluorescence

The computer-implemented method for inspection of a sample includes defining a plurality of locations on a surface of the sample, irradiating the surface at each of the locations with a beam of X-rays, and measuring an angular distribution of the X-rays that are emitted from the surface responsively to the beam, so as to produce a respective plurality of X-ray spectra. The X-ray spectra are analyzed to produce respective figures-of-merit indicative of a measurement quality of the X-ray spectra at the respective location. One or more locations are selected out of the plurality of locations responsively to the figures-of-merit, and a property of the sample is estimated using the X-ray spectra measured at the selected location.

Automated selection of X-ray reflectometry measurement locations

Apparatus for analysis of a sample includes a radiation source, which is adapted to direct a first, converging beam of X-rays toward a surface of the sample and to direct a second, collimated beam of the X-rays toward the surface of the sample. A motion assembly moves the radiation source between a first source position, in which the X-rays are directed toward the surface of the sample at a grazing angle, and a second source position, in which the X-rays are directed toward the surface in a vicinity of a Bragg angle of the sample. A detector assembly senses the X-rays scattered from the sample as a function of angle while the radiation source is in either of the first and second source configurations and in either of the first and second source positions. A signal processor receives and processes output signals from the detector assembly so as to determine a characteristic of the sample.

Multifunction X-ray analysis system

Growing community of inventors

Haifa, Israel

Isaac Mazor