Nxp Usa, Inc.

Irina Yuryevna Bashkirova

Michael A Stockinger

Mohamed S Moosa

Vasily Vladimirovich Korolev

Olga Olegovna Sibagatullina

An integrated circuit is provided with a protected circuit wherein a first FinFET operably coupled to a signal node is protected against electrostatic discharge voltage damage by a standard cell electrostatic discharge protection circuit which is connected between first and second voltage supplies and which includes a first FinFET diode connected between the signal node and the first voltage supply, and a second FinFET diode connected between the signal node and the second voltage supply, where the first and second FinFET diodes are each formed with a FinFET device comprising (1) a body well region forming a first diode terminal connected to one of the first or second voltage supplies, and (2) a shorted gate, source, and drain regions forming a second diode terminal connected to the signal node.

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Moscow, Russia

Irina Yuryevna Bashkirova