Asm IP Holding B.v.

Ippei Yanagisawa

Naoto Tsuji

Makoto Igarashi

Shuzo Hebiguchi

Kei Hara

Miho Shimotori

Yu Min Huang

Chie Kaneko

Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing high frequency, high plasma power to polymerize the one or more precursors to form dense low-k material with desired properties.

Method of forming low-k material layer with high-frequency power, structure including the layer, and system for forming same

Examples of a susceptor for supporting a substrate includes a base metal formed of aluminum or a material containing aluminum, an anodized layer covering a surface of the base metal and having cracks therein, and a CF coating of polymer provided in the cracks such that the exposure of the base metal is avoided.

Susceptor having CF coating

Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

Substrate processing device having connection plates, substrate processing method

Shower plate

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Sagamihara, Japan

Ippei Yanagisawa