Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Ippei Nishinaka

Goshi Biwa

Akira Ohmae

Tatsuo Ohashi

Yusuke Kataoka

Norifumi Kikuchi

Hiroki Naito

Hiroyuki Okuyama

Katsuhiro Tomoda

Hisao Sakurai

Sayaka Aoki

Gen Sakoda

Toshio Fujino

Hideyuki Nishioka

Tsuyoshi Sahoda

A display device is provided with a substrate, a plurality of surface mount devices two-dimensionally arranged on the substrate in a first direction and a second direction, and a plurality of signal lines and a plurality of scanning lines arranged on the substrate. The surface mount device is provided with four pixels. Each of the four pixels is provided with light sources of three colors, and each of the light sources of three colors includes a light emitting diode element. The plurality of scanning lines extends in the first direction, and the plurality of signal lines extends in the second direction. The number of signal lines is three for two pixels arranged in the first direction, and the number of scanning lines is four for two pixels arranged in the second direction.

Display device and surface mount device

There is provided a display device including a plurality of unit regions disposed adjacent to each other, a first region that is provided in each of the unit regions, and emits first light, and a second region that is provided outside the first region in each of the unit regions, and emits second light. The second light is different from the first light in at least one of luminance, wavelength, or surface-reflection component, the second regions are provided between adjacent ones of the first regions, and a difference in luminance, wavelength, or surface-reflection component between the second light to be emitted from adjacent ones of the unit regions is smaller than a difference in luminance, wavelength, or surface-reflection component between the first light and the second light in a same one of the unit regions.

Display device and electronic apparatus

A display device includes a plurality of first pixels each including a first light emitting diode element and a second light emitting diode element having different colors, and a plurality of second pixels each including a third light emitting diode element and a fourth light emitting diode element having different colors. The first pixel and the second pixel have different combinations of colors of light emitting diode elements, the first light emitting diode element is a green light emitting diode element, and the third light emitting diode element is a green light emitting diode element, a yellow light emitting diode element, or a white light emitting diode element. The first pixels and the second pixels are alternately arranged in a first direction and alternately arranged in a second direction intersecting the first direction.

Display device with surface mount devices that include pixels

[Object] A light-emitting element includes: a semiconductor layer; a first electrode portion; a second electrode portion; a first insulating layer; and a metal layer. The semiconductor layer includes an active layer, a first-conductivity-type layer, and a second-conductivity-type layer, and has a semiconductor-layer side surface including a side surface of the active layer, a side surface of the first-conductivity-type layer, and a side surface of the second-conductivity-type layer. The first electrode portion is connected to the first-conductivity-type layer. The second electrode portion is connected to the second-conductivity-type layer. The first insulating layer is in contact at least with a part of the semiconductor-layer side surface, the part of the semiconductor-layer side surface corresponding to a part of the side surface of the active layer. The metal layer is in contact at least with an opposed surface of the first insulating layer, the opposed surface of the first insulating layer facing the side surface of the active layer. The metal layer is conducted to the first electrode portion and insulated from the second electrode portion.

Light-emitting element, light-emitting unit, light-emitting panel device, and method for driving light-emitting panel device

A light-emitting device assembly includes a light-emitting device including a light-emitting layer, a first electrode, and a second electrode, and a first connecting portion and a second connecting portion provided on a base, in which the first connecting portion and the second connecting portion are separated from each other by a separation portion, the base is exposed from the separation portion, a wide portion is on a first connecting portion side of the separation portion, the first electrode includes a first portion and a second portion, the second portion of the first electrode is connected to the first connecting portion, the first portion of the first electrode extends from the second portion of the first electrode, and an orthographic projection image of the first portion of the first electrode with respect to the base and the wide portion of the separation portion overlap with each other at least in part.

Light-emitting device assembly, method of producing the same, and display apparatus

A light emitting device includes a light emitting part, a black layer, and a light diffusion partthat is formed on or above the black layer. The black layeris provided with an opening partthat allows light emitted from the light emitting part to pass through it. Then, light having passed through the opening partpasses through the light diffusion part

Light emitting device and display apparatus

[Solving Means] A semiconductor unit includes a substrate, a semiconductor device, and a plating layer. The semiconductor device includes a semiconductor layer and one or more electrodes, the one or more electrodes being connected to the semiconductor layer and including a platinum-group element as a main material. The plating layer bonds the substrate and the electrode.

Semiconductor unit, semiconductor device, light-emitting apparatus, display apparatus, and method of manufacturing semiconductor device

There is provided a light emitting apparatus, including a plurality of light emitting elements having biased light properties; and a mounting substrate where the light emitting elements are arranged such that the biased light properties are complemented within a group including at least two light emitting elements among a plurality of the light emitting elements. Also, there are provided a light emitting unit, a display apparatus, an electronic device and a light emitting element using a plurality of point light sources.

Light emitting apparatus, light emitting unit, display apparatus, electronic device and light emitting element

A display apparatus may comprise a display section and circuitry. The display section may comprise a plurality of display units arranged in a two-dimensional array, wherein each of the display units comprises a plurality of pixels arranged in a matrix, and each of the plurality pixels comprises a plurality of light-emitting devices that are each configured to emit a different color of light. The circuitry may be configured to generate a corrected image signal based on an uncorrected image signal and correction factors that correct luminance and chromaticity of the light-emitting devices, including at least some correction factors determined by adjusting light emission intensity ratios of first light-emitting devices that are configured to emit light of a particular color and are disposed in different ones of the plurality of pixels.

Display apparatus and correction method

A GaN-based semiconductor element which can suppress a leakage current generated during reverse bias application, an optical device using the same, and an image display apparatus using the optical device are provided. The GaN-based semiconductor element has a first GaN-based compound layer including an n-type conductive layer; a second GaN-based compound layer including a p-type conductive layer; and an active layer provided between the first GaN-based compound layer and the second GaN-based compound layer. In this GaN-based semiconductor element, the first GaN-based compound layer includes an underlayer having an n-type impurity concentration in the range of 3&#xd7;10to 3&#xd7;10/cm, and when a reverse bias of 5 V is applied, a leakage current density, which is the density of a current flowing per unit area of the active layer, is 2&#xd7;10A/cmor less.

Gallium nitride-based semiconductor element, optical device using the same, and image display apparatus using optical device

A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, includes the steps of: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before a light emission luminance value becomes constant.

Method of driving GaN-based semiconductor light emitting element, method of driving GaN-based semiconductor light emitting element of image display device, method of driving planar light source device, and method of driving light emitting device

A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.

GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus

A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side.

GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus

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Kanagawa, Japan

Ippei Nishinaka