Semiconductor Energy Laboratory Co., Ltd.

Ippei Kobayashi

Shunpei Yamazaki

Takeshi Fukada

Masayoshi Abe

Masato Susukida

Susumu Nagayama

Kunio Suzuki

Mikio Kinka

Katsuhiko Shibata

Kaoru Koyanagi

Toshimitsu Konuma

Hiroyuki Sakayori

Toshiharu Yamaguchi

Toshio Watanabe

Takashi Inujima

Masahiko Sato

Akio Osabe

Osamu Aoyagi

Kaoru Tabata

Chizuru Isigaki

Seiichi Odaka

Toru Takayama

Akira Mase

Toshiji Hamatani

Mitsunori Sakama

Masakazu Odaka

Shumpei Yamazaki

Chizuru Ishigaki

An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.

Liquid crystal device and method for manufacturing same with spacers formed by photolithography

An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this stucture, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.

Liquid crystal device having sealant and spacers made from the same

Liquid crystal device and method for manufacturing same with spacers

An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of photocurable resin by photolithography. With this structure, the spacers can be in surface contact with the inside surfaces of :he substrates on which electrode arrangement and active devices are formed.

An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.

Method for photo annealing non-single crystalline semiconductor films

An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.

Method for manufacturing a semiconductor device free from electrical

An improved method of manufacturing liquid crystal devices is described. The liquid crystal device consists of a pair of substrates, a liquid crystal layer disposed between the substrates, an electrode arrangement including driving devices for applying an electric field to the liquid crystal layer. The driving device is formed of a semiconductor film having a pin junction. The method includes the step of repairing short current paths present in the semiconductor film by applying a reverse voltage to the driving device.

Method of manufacturing liquid crystal devices having semiconductor

A liquid crystal device can be driven by application of a unipolar electric field to a ferroelectric liquid crystal layer. Without application of an electric field, isotropic characteristics are observed because of a spiral arrangement of the liquid crystal molecules. Under the application of an electric field, a birefringence is observed because of liquid crystal molecules being aligned in one direction. The device can be driven by applying an electric field in one direction and removing the electric field.

Liquid crystal device with a smectic chiral liquid crystal

An improved liquid crystal device which is driven by applying electric field thereon is shown. The liquid crystal is contained in the device as a layer which is separated into pixel and the optical condition of which is changed by the electric field applied. Contiguous to the liquid crystal layer, a ferroelectric film is provided to impart hysteresis to the device.

Liquid crystal device with a ferroelectric thin film

An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Semiconductor manufacturing device

An improved liquid crystal device is shown. The device comprises a pair of substrates, a liquid crystal layer disposed inbetween and a pair of electrodes formed on the opposed insides of the substrate for applying an electric field on the liquid crystal layer. Further a dielectric film is formed on a inside of the substrate of the device. In response to an electric field applied to the liquid crystal layer, an electric charge is accumulated on the dielectric film to enable the device to exhibit apparent coersive electric field.

Liquid crystal device with an apparent hysteresis

An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

Semiconductor device free from the current leakage through a

A liquid crystal device can be driven by application of unipolar electric field to a ferroelectric liquid crystal layer. Without application of electric field, isotropic characteristics is observed because of a spiral arrangement of liquid crystal molecules. Under application of electric field, a birefringence is observed because of liquid crystal molecules aligned in one direction. The device can be driven by applying an electric field in one direction and removing the electric field, by using a rectifier in series with each pixel.

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Atsugi, Japan

Ippei Kobayashi