Murata Manufacturing Co., Ltd.

Ippei Hatsuda

Hajime Kando

Hideki Iwamoto

Syunsuke Kido

Takashi Yamane

Korekiyo Ito

Keiji Okada

Masanori Otagawa

Norihiro Hayakawa

An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a support provided on the piezoelectric substrate so as to surround the IDT electrode, and a cover provided on the support. The support has a larger thermal expansion coefficient than the piezoelectric substrate. The IDT electrode is provided in a hollow space that is surrounded by the piezoelectric substrate, the support, and the cover. The support includes an inner surface on a side of the hollow space, and an outer surface on a side opposite to the inner surface, and the support includes a recess provided in at least one of the inner and outer surfaces.

Acoustic wave device, radio-frequency front end circuit, and communication device

An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle &#x3bd;. The oblique angle &#x3bd; is about 0.4&#xb0; or more and about 10&#xb0; or less.

Elastic wave device and filter device

A method for producing a piezoelectric composite substrate with satisfactory productivity controls the inclination of the crystal axis and the polar axis of a single-crystal thin film and prevents an adverse effect due to pyroelectricity in a production process. The method for producing a piezoelectric composite substrate provided with a plurality of piezoelectric materials includes an ion-implantation step, a bonding step, and a separation step. In the ion-implantation step, Hions are implanted into a piezoelectric single crystal material. In the bonding step, the piezoelectric single crystal material is bonded to a piezoelectric single crystal material. At this time, the polarity of the polar surface of the piezoelectric single crystal material is opposite to the polarity of the polar surface of the piezoelectric single crystal material, the polar surfaces being bonded to each other. In the separation step, a separation layer of the piezoelectric single crystal material is divided by heating to separate a piezoelectric single-crystal thin film.

Method for producing piezoelectric composite substrate and method for producing piezoelectric element

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Nagaokakyo, Japan

Ippei Hatsuda