Ampleon Netherlands B.v.

Nxp B.v.

Iouri Volokhine

Igor Blednov

Yi Zhu

Vittorio Cuoco

Josephus Henricus Bartholomeus Van Der Zanden

Rob Mathijs Heeres

Josephus Van Der Zanden

Gutta Venkata

Venkata Gutta

Jos Van Der Zanden

Example embodiments relate to power amplifiers with decreased RF return current losses. One embodiment includes a RF power amplifier package that includes a semiconductor die, an input lead, first bondwire connections, second bondwire connections, and a plurality of shields. The semiconductor die includes an RF power transistor that includes output bond pads, input bond pads, a plurality of input fingers, and a plurality of output fingers. Further, each shield of the plurality of shields is arranged in between a respective input finger of the plurality of input fingers and a respective output finger of the plurality of output fingers and extending along with said respective input finger and output finger. In addition, each shield of the plurality of shields is connected to a ground terminal of the RF power transistor. The input fingers, output fingers, and shields are formed using a metal layer stack of multiple metal layers.

Power amplifier with decreased RF return current losses

An example embodiment relates to a radiofrequency (RF) power amplifier pallet, and further relates to an electronic device that includes such a pallet. The RF power amplifier pallet may include a coupled line coupler that includes a first line segment and a second line segment that is electromagnetically coupled to the first line segment. A first end of the first line segment may be electrically connected to an output of an RF amplifying unit. The RF power amplifier pallet may further include a dielectric filled waveguide having an end section of the first dielectric substrate, an end section of the second dielectric substrate, and a plurality of metal wall segments covering the end sections of the first and second dielectric layers. The plurality of metal wall segments may be arranged spaced apart from the first line segment and electrically connected to a first end of the second line segment.

RF power amplifier pallet

A package is provided. The package comprises a die and an impedance matching network. The die has a first terminal and a second terminal. The impedance matching network is coupled to the second terminal and comprises a first inductor and a first capacitor. The first inductor comprises first bond wire connections coupled between the second terminal and a first bond pad on the die, and second bond wire connections coupled between the first bond pad and a second bond pad coupled to the first capacitor.

Impedance matching configuration

The present invention relates to an amplifier comprising a plurality of Doherty amplifier cells each Doherty amplifier cell comprising an input and an output respectively connected to an input and an output of the amplifier, a main amplifier stage, a peak amplifier stage and a signal combining circuit configured to combine signals from outputs of the main and peak amplifiers and provide a combined signal to the output of the Doherty amplifier cell. Each cell comprises a controllable splitter having an input (connected to the input of the Doherty amplifier cell. The controllable splitter is configured to receive a splitter control signal and modify an amplitude and phase of a signal at the input of the Doherty amplifier cell in response to the splitter control signal.

Doherty amplifier circuit

The invention relates to high power radiofrequency amplifiers, in particular to amplifiers having output impedance matching networks, exemplary embodiments of which include a radiofrequency amplifier having an active device mounted on a substrate within a device package, the amplifier having an output impedance matching network comprising a high pass network provided at least partly on the active device and a low pass network having a first inductive shunt connection between an output of the active device and a first output lead and a second inductive shunt connection between the output of the active device and a second output lead, wherein part of the second output lead forms an inductance contributing to the inductance of the low pass network.

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Nijmegen, Netherlands

Iouri Volokhine