Cree Gmbh

University of California

Ioulia P Smorchkova

Umesh Kumar Mishra

Yifeng Wu

Stacia Keller

Wladyslaw Walukiewicz

Prashant Chavarkar

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an AlGaN (y=1 or y 1) layer on the GaN buffer layer. An AlGaN (0&#x2266;x&#x2266;0.5) barrier layer on to the AlGaN layer, opposite the GaN buffer layer, AlGaN layer having a higher Al concentration than that of the AlGaN barrier layer. A preferred AlGaN layer has y=1 or y1 and a preferred AlGaN barrier layer has 0&#x2266;x&#x2266;0.5. A 2DEG forms at the interface between the GaN buffer layer and the AlGaN layer. Respective source, drain and gate contacts are formed on the AlGaN barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the AlGaN layer and a nucleation layer between the AlGaN buffer layer and the substrate.

Growing community of inventors

Redondo Beach, CA, United States of America

Ioulia P Smorchkova