Basf Se Corporation

Clap Co., Ltd.

Iori Doi

Thomas Weitz

Stefan Becker

Mi Zhou

Chongjun Jiao

Michael Eustachi

Fabien Nekelson

Szehui Chua

Emmanuel Martin

Hans Jürg Kirner

Ashok Kumar Mishra

Chao Wu

Fulvio G Brunetti

Fulvio Giacomo Brunetti

Wyman Zhao

Hitoshi Yamato

Takuya Tsuda

Raissa Nathania Santoso

Mei Shan Lam

The present invention provides compounds of formulae (1) (2) wherein Rand Rare Calkyl, CO-alkenyl, C-alkynyl, C-cycloalkyl, C-aryl or 5 to 14 membered heteroaryl, wherein C-alkyl, CO-alkenyl and CO-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O&#x2014;C-alkyl, O&#x2014;C-alkenyl and O&#x2014;CO-alkynyl, and wherein C-cycloalkyl, C-aryl and 5 to 14 membered heteroaryl can be substituted with one or more substituents selected from the group consisting of halogen, Calkyl, CO-alkenyl, CO-alkynyl, O&#x2014;C-alkyl, O&#x2014;Co-alkenyl and O&#x2014;Co-alkynyl, R, R, Rand Rare independently and at each occurrence selected from the group consisting of Calkyl, C-alkenyl, C-alkynyl, C-aryl and 5 to 14 membered heteroaryl, wherein C-alkyl, Co-alkenyl and Co-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O&#x2014;C-alkyl, O&#x2014;C-alkenyl and O&#x2014;C-alkynyl, and wherein C-cycloalkyl, C-aryl and 5 to 14 membered heteroaryl can be substituted with one or more substituents selected from the group consisting of halogen, Calkyl, Co-alkenyl, C0-alkynyl, O&#x2014;C-alkyl, O&#x2014;C-alkenyl and O&#x2014;Co-alkynyl, n and o are independently 0, 1, 2, 3, 4 or 5, and m and p are independently 0, 1, 2 or 3, and to electronic device comprising the compounds of formulae 1 or 2. 

Substituted benzonaphthathiophene compounds for organic electronics

The present invention provides a process for manufacturing an electronic device comprising a semiconducting layer, which process comprises i) a step of applying a composition comprising at least a compound of formulae (1A)-(1B)-(1C) on a precursor of the electronic device in order to form a layer, and ii) a step of treating the layer of step i) with light in order to form a semiconducting layer, we well as a compound of formula 1A, 1B or 1C, compositions comprising at least one compound of formula 1A, 1B or 1C, and the use of at least one compound of formula 1A, 1B or 1C as photocleavable precursor for organic semiconducting materials. 

Sulfonium salts of DNTT and related compounds as soluble photocleavable precursors for organic semiconductors for use in organic field-effect transistors

The present invention provides compounds of formula a process for their preparation, a solution comprising these compounds, a process for the preparation of a device using the solution, devices obtainable by the process and the use of the bis-azide-type compounds as cross-linkers.

Azide-based crosslinking agents

The present invention provides compounds of formula (1) wherein o is 1, 2 or 3, p is 0, 1 or 2, n is 0, 1 or 2, m is 0, 1 or 2, and A is a mono- or polycyclic ring system, which may contain at least one heteroatom, and an electronic device comprising the compounds as semiconducting material. 

Heteroacene compounds for organic electronics

The present invention provides compounds of formula 1 wherein Xand Xare independently from each other O, S or Se, and an electronic device comprising the compounds as semiconducting material. 

Heteroacenes for organic electronics

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Iori Doi