Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Centre National De La Recherche Scientifique-cnrs

Commissariat a L'energie Atomique

Institut Polytechnique De Grenoble

Université Grenoble Alpes

Université D'orleans

Ioan-Lucian Prejbeanu

Ricardo Sousa

Bernard Dieny

Jean-Pierre Nozieres

Olivier Redon

Philippe Sabon

Claire Baraduc

Liliana Buda-prejbeanu

Marco Mansueto

Nuno-Filipe Fernandes Caçoilo

Olivier Fruchart

Amandine Bocheux

Claude Cavoit

A method for manufacturing a spintronic device including a non-magnetic spacer, a reference layer and a storage layer including a magnetic pillar, the method including depositing at least one sacrificial layer; forming at least one flared cavity, traversing the sacrificial layer; depositing at least one magnetic layer in the cavity; eliminating the excess of magnetic layer outside of the cavity; removing the dielectric layer in order to form at least one magnetic pillar forming all or part of the storage layer; depositing at least the non-magnetic spacer and the reference layer; filling the spaces between the magnetic pillars with a dielectric material; carrying out a polishing; forming an electrical contact on the surface of the element surmounting the magnetic pillar.

Method for manufacturing a spintronic device comprising a thick active magnetic layer

A method for measuring the intensity of an external magnetic field by using a magnetic memory point including a storage layer having a magnetisation switchable between two magnetisation directions substantially perpendicular to the plane of the layer; a reference layer having a fixed magnetisation perpendicular to the plane of the layer; and a tunnel barrier layer separating the storage layer and the reference layer; the method including successively applying a plurality of currents or voltages of different amplitudes to the memory point until switching of the magnetisation direction of the storage layer takes place to determine a minimum switching current value of the magnetisation direction of the storage layer or a minimum switching voltage value of the magnetisation direction of the storage layer, and determining the intensity of the external magnetic field to be measured from the minimum switching current value or the minimum switching voltage value.

Method for measuring an external magnetic field by at least one magnetic memory point

A magnetic tunnel junction includes at least one free layer, at least one reference layer, and at least one tunnel barrier separating the free layer and the reference layer, wherein the free layer is an inhomogeneous granular layer including at least two grains, each grain of the at least two grains being sensibly magnetically decoupled from the other adjacent grains of the at least two grains.

Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices

A system and method for writing to a magnetic memory written in a thermally assisted manner, each memory point formed by a magnetic tunnel junction, and having a substantially circular cross-section of the memory which is parallel to the plane of the layers forming the tunnel junction. The tunnel junction includes at least a trapped layer with a fixed magnetisation direction, a free layer with a variable magnetisation direction with an insulating layer arranged there between. The free layer is formed from at least one soft magnetic layer and a trapped layer, with the two layers being magnetically coupled by contact. During read operations and at rest, the operating temperature of the memory is lower than the blocking temperature of the free and trapped layers, respectively.

Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same

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GRENOBLE, France

Ioan-Lucian Prejbeanu