Samsung Electronics Co., Ltd.

InWon Park

Jongsoon Park

Bosoon Kim

Youngmook Oh

Kyungseok Min

Sughyun Sung

Seongjin Nam

Hyunggoo Lee

Hyungdong Kim

Migyeong Gwon

A semiconductor device includes a substrate including a boundary region between first and second regions, first active patterns on the first region, second active patterns on the second region, and an isolation insulating pattern on the boundary region between the first and second active patterns. A width of at least some of the first active patterns have different widths. Widths of the second active patterns may be equal to each other. A bottom surface of the isolation insulating pattern includes a first bottom surface adjacent to a corresponding first active pattern, a second bottom surface adjacent to a corresponding second active pattern, and a third bottom surface between the first bottom surface and the second bottom surface. The third bottom surface is located at a different height from those of the first and second bottom surfaces with respect to a bottom surface of the substrate.

Semiconductor devices including an isolation insulating pattern on a boundary region of a substrate and between first active patterns and second active patterns

Semiconductor devices including an isolation insulating pattern with a first bottom surface, a second bottom surface, and a third bottom surface therebetween, where the third bottom surface has a different height than the first and second bottom surfaces

A semiconductor device includes a fin structure which vertically protrudes from a substrate and extends in a first direction parallel to a top surface of the substrate. The fin structure includes a lower pattern and an active pattern vertically protruding from a top surface of the lower pattern. The top surface of the lower pattern includes a flat portion substantially parallel to the top surface of the substrate. The lower pattern includes a first sidewall extending in the first direction and a second sidewall extending in a second direction crossing the first direction. The first sidewall is inclined relative to the top surface of the substrate at a first angle greater than a second angle corresponding to the second sidewall that is inclined relative to the top surface of the substrate.

Semiconductor device and method for manufacturing the same

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Yongin-si, South Korea

InWon Park