Samsung Electronics Co., Ltd.

Intak Jeon

Hanjin Lim

Jaehyoung Choi

HyungSuk Jung

Hyukwoo Kwon

Younglim Park

Jiye Baek

A semiconductor device of the disclosure includes a substrate, a capacitor contact structure electrically connected to the substrate, a lower electrode connected to the capacitor contact structure, a capacitor insulating layer covering the lower electrode, and an upper electrode covering the capacitor insulating layer. The upper electrode includes a multiple layer on the capacitor insulating layer, and a cover layer on the multiple layer. The multiple layer includes a first electrode layer, a second electrode layer, and a first metal silicide layer between the first and second electrode layers. A work function of the first metal silicide layer is greater than a work function of the first electrode layer and a work function of the second electrode layer.

Semiconductor device including capacitor structure and method for manufacturing the same

An integrated circuit device includes: a lower electrode disposed on a substrate; an insulating support pattern supporting the lower electrode; a dielectric film surrounding the lower electrode and the insulating support pattern; a high-k interface layer arranged between the lower electrode and the dielectric film and between the insulating support pattern and the dielectric film, wherein the high-k interface layer contacts the insulating support pattern and includes a zirconium oxide layer; and an upper electrode disposed adjacent the lower electrode, wherein the high-k interface layer and the dielectric film are disposed between the upper electrode and the lower electrode.

Integrated circuit device

An integrated circuit semiconductor device includes a lower electrode formed on a substrate extending in a first direction and a second direction perpendicular to the first direction and a support structure supporting the lower electrode. The support structure includes a support pattern surrounding the lower electrode, extending in the first direction and the second direction, and having a hole through which the lower electrode passes, and a concavo-convex structure having at a surface of the support pattern a plurality of convex portions extending in a third direction perpendicular to the first direction and the second direction, and a plurality of concave portions arranged between the convex portions.

Integrated circuit semiconductor device

A semiconductor device of the disclosure may include a substrate, a gate structure on the substrate, a capacitor contact structure connected to the substrate, a lower electrode connected to the capacitor contact structure, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode and including a halogen material, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer. The interfacial layer may include a first surface contacting the lower electrode, and a second surface contacting the capacitor insulating layer. The halogen material of the interfacial layer may be closer to the first surface than to the second surface.

Growing community of inventors

Seoul, South Korea

Intak Jeon