Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Insung Joe

Minho Jang

Minkyung Kim

Hongki Kim

Minkwan Kim

Donghyun Kim

Jonghwa Shin

Jeongsoon Kang

Jong Uk Kim

Seungkuk Kang

Joonkyo Jung

An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

Image sensors including phase detection pixel

An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.

Image sensor wherein the transfer gate contacts a first refractive layer that is coplanar with a second refractive layer

A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

Light absorption structure and light sensing device having the same

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Seoul, South Korea

Insung Joe