International Business Machines Corporation

Inna V Babich

Marie Angelopoulos

Edward D Babich

Wayne Martin Moreau

Katherina E Babich

Kuang-Jung Chen

Ari Aviram

Karen Elizabeth Petrillo

David Earle Seeger

James J Bucchignano

Steven A Rishton

Ricardo Indalecio Fuentes

The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.

Energy sensitive electrically conductive admixtures, uses thereof, methods of fabrication and structures fabricated therewith

A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.

Forming a pattern of a negative photoresist

Photoresist compositions of improved reactive ion etching comprising polymers of 2-hydroxyalkyl methacrylate and/or 2-hydroxyalkylacrylate and a titanate, zirconate and/or hafnate are provided. The photoresist compositions are used for forming positive lithographic patterns.

RIE etch resistant nonchemically amplified resist composition and use thereof

Solutions of graft polymers of a polymer having reactive hydrogen groups and grafted through reactive hydrogen groups an alkoxy metallic compound wherein the metal is titanium, zirconium and/or hafnium are useful as photoresist materials which are resistant to plasma. Also, compounds and graft polymers wherein the alkoxy metallic compound also contains silicon, tin or germanium are provided.

Graft polymers and use thereof

Energy sensitive electrically conductive admixtures

An apparatus for modifying, such as etching or developing, selected areas of a wafer is disclosed including a rotatable turntable upon which a wafer having a surface to be etched is mounted. A delivery nozzle for directing modifying fluid onto the wafer surface is disposed over the wafer surface at a first location. At least one structure for removing the modifying fluid, such as a vacuum nozzle is positioned over the surface of the wafer at a second location. The modifying fluid moves across the wafer surface by centrifugal force away from the first location and is removed at the second location. The surface area of the wafer between the first and second locations is modified by the etching fluid.

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Chappaqua, NY, United States of America

Inna V Babich