Samsung Electronics Co., Ltd.

Inkeun Baek

Ikseon Jeon

Jongmin Yoon

Junbum Park

Namil Koo

Suhwan Park

JunBum Park

Sunhong Jun

Martin Priwisch

Kwangrak Kim

Nagel Michael

Sion Lee

Alexander Michalski

Michael Nagel

Yoonkyung Jang

Wonki Lee

Eunhyuk Choi

Wontae Kim

According to embodiments, a cantilever is provided. The cantilever includes a first conductive line, a second conductive line, and a third conductive line extending on the substrate, a microtip arranged on the substrate, and an emitter antenna arranged on the microtip, connected to the first to third conductive lines, and configured to produce a scattering signal of a terahertz wave band, wherein the emitter antenna includes a first emitter electrode connected to the first conductive line, a second emitter electrode connected to the second conductive line and adjacent to the first emitter electrode, a third emitter electrode connected to the third conductive line and spaced apart from the first emitter electrode with the second emitter electrode in-between, and a scattering part connecting the first and second emitter electrodes with each other.

Terahertz probe

A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.

Terahertz signal measuring apparatus and measuring method

Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.

Method of extracting properties of a layer on a wafer

An inspection apparatus includes: a first probe including a receiver antenna configured to detect the terahertz wave emitted by an inspection signal source and that has passed through the wafer, wherein the first probe includes: a first probe tip in which the receiver antenna is embedded, the receiver antenna including a first photoconductive switch; a first printed circuit board on which the first probe tip is mounted; a first optical bracket coupled to the first printed circuit board; a first optical connector configured to transmit a first laser beam into the first probe, and coupled to the first optical bracket, wherein the first laser beam is configured to excite the first photoconductive switch.

Inspection apparatus and method of inspecting wafer

A semiconductor substrate processing apparatus includes: a metastructure layer divided into a plurality of microstructures by grooves, a light-transmitting dielectric substrate that supports the plurality of microstructures and is configured to allow an electromagnetic wave to be transmitted therethrough, and a frame including an exhaust hole configured to receive gas introduced from the grooves such as to provide suction force to the semiconductor substrate, wherein each of the plurality of microstructures has a smaller width than a wavelength of the electromagnetic wave, and each of the grooves has a smaller width than the wavelength of the electromagnetic wave.

Semiconductor substrate processing apparatus and semiconductor substrate measuring apparatus using the same

An inspection apparatus includes an inspection signal source configured to irradiate a wafer with an inspection ray having a frequency in a range of 0.1 terahertz (THz) to 10 THz, a curved rail, a probe mount configured to move along the curved rail, and first and second probes coupled to the probe mount, wherein the first probe is configured to detect the inspection ray transmitted through the wafer, and the curved rail has a curved surface convex toward the first and second probes.

Inspection apparatus and inspection method using same

A hybrid probe includes a probe body including a wiring and extending in a first direction; and a probe tip coupled to the probe body and including a first antenna, a second antenna, and an isolation layer. The hybrid probe may operate in a reflection mode using the first antenna and the second antenna, and operate in a transmission mode using the second antenna.

Hybrid probe, physical property analysis apparatus including the same, and method of measuring semiconductor device using the apparatus

Provided is a probe configured to detect a near field, the probe including a probe substrate having a tip region at an end portion of the probe substrate, a width of the tip region being less than a width of a remaining region of the probe substrate, a first electrode and a second electrode disposed on a surface of the probe substrate, the first electrode and the second electrode being spaced apart from each other and extending from the tip region along the probe substrate, an emitter and a detector disposed between the first electrode and the second electrode, the emitter and the detector being spaced apart from each other in a direction in which the probe substrate extends, and being configured to be photo switched, and a reflector disposed above the emitter and the detector in the direction in which the probe substrate extends opposite to the tip region, and configured to reflect an electromagnetic wave emitted from the emitter.

Probe for detecting near field and near-field detecting system including the same

A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.

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Suwon-si, South Korea

Inkeun Baek