Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Norwegian University of Life Sciences

Ingunn Burud

Jordi Veirman

Wilfried Favre

Elénore Letty

Espen Olsen

Torbjørn Mehl

Lisa Kvalbein

A method for determining the thermal donor concentration of a test sample made of a semiconductor material, includes providing a reference sample made of the same semiconductor material and having a known thermal donor concentration; measuring a photoluminescence signal of the reference sample for a photon energy comprised between 0.65 eV and 0.8 eV, the photoluminescence signal of the reference sample exhibiting an intensity peak in a photon energy range of 0.65 eV to 0.8 eV; determining, from the photoluminescence signal, an experimental relationship between the thermal donor concentration and a parameter representative of the intensity peak; measuring a photoluminescence signal of the test sample for at least one photon energy comprised between 0.65 eV and 0.8 eV; determining from the photoluminescence signal a specific value of the parameter; and determining the thermal donor concentration from the specific value of the parameter by using the experimental relationship.

Method for determining the thermal donor concentration of a semiconductor sample

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ÅS, Norway

Ingunn Burud