Ams Ag

Austriamicrosystems Ag

Ingrid Jonak-Auer

Jordi Teva

Gerald Meinhardt

Bernhard Löffler

Jochen Kraft

Rainer Minixhofer

Verena Vescoli

Herbert Truppe

Gernot Fasching

Bernhard LÖFFLER

A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.

Semiconductor device for infrared detection, method of manufacturing semiconductor device for infrared detection and infrared detector

The near-infrared photodetector semiconductor device comprises a semiconductor layer () of a first type of conductivity with a main surface (), a trench or a plurality of trenches () in the semiconductor layer at the main surface, a SiGe alloy layer () in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.

Near-infrared photodetector semiconductor device

A lateral avalanche photodiode device comprises a semiconductor substrate () having a trench () with side walls () extending from a main surface () to a rear surface (). A first doped region () is present at the side walls of the trench, and a second doped region () is arranged at a distance from the first doped region. A third doped region () is located adjacent to the first doped region, extends through the substrate from the main surface to the rear surface, and is arranged between the first doped region and the second doped region. The third doped region () is the avalanche multiplication region of the photodiode structure. The second doped region and the third doped region have a first type of conductivity, and the first doped region has a second type of conductivity which is opposite to the first type of conductivity. The region of the substrate that is between the first doped region and the second doped region is of the first type of conductivity.

Lateral avalanche photodiode device and method of production

The photodiode has a p-type doped region () and an n-type doped region () in a semiconductor body (), and a pn junction () between the p-type doped region and the n-type doped region. The semiconductor body has a cavity () such that the pn junction () has a distance (d) of at most 30 &#x3bc;m from the bottom of the cavity ().

Photodiode and production method

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Graz, Austria

Ingrid Jonak-Auer