Kla-tencor Technologies Corporation

Applied Materials, Inc.

Kla Tencor Corporation

Ingrid B Peterson

Lisheng Gao

Ashok V Kulkarni

Kenong Wu

Michal Kowalski

David Winslow Randall

Mike Von Den Hoff

Ramon Ynzunza

Ariel Tribble

Kourosh Nafisi

Michael Robert Rice

Jeffrey C Hudgens

Todd J Egan

Moshe E Preil

Sagar A Kekare

Ed Yum

Jim Wiley

Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of the reticle design pattern using a sensor disposed on a substrate arranged proximate to an image plane of an exposure system configured to perform a wafer printing process using the reticle design pattern. The images illustrate how the reticle design pattern will be projected on a wafer by the exposure system at different values of one or more parameters of the wafer printing process. The method also includes detecting defects in the reticle design pattern based on a comparison of two or more of the images corresponding to two or more of the different values.

Methods and systems for detecting defects in a reticle design pattern

Various computer-implemented methods are provided. One method for sorting defects in a design pattern of a reticle includes searching for defects of interest in inspection data using priority information associated with individual defects in combination with one or more characteristics of a region proximate the individual defects. The priority information corresponds to modulation levels associated with the individual defects. The inspection data is generated by comparing images of the reticle generated for different values of a lithographic variable. The images include at least one reference image and at least one modulated image. A composite reference image can be generated from two or more reference images. The method also includes assigning one or more identifiers to the defects of interest. The identifier(s) may include, for example, a defect classification and/or an indicator identifying if the defects of interest are to be used for further processing.

Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle

Electronic device manufacturing systems and methods are provided. In some aspects, a system having a dual-mode robot is provided which is disposed within a system component (e.g., a factory interface or transfer chamber) and adapted to operate in a first mode and a second mode. In the first mode, the robot may transfer a substrate between components of the system (e.g., between a carrier and a process chamber or chamber to chamber) and in the second mode, the robot may execute a process motion profile (e.g., metrology).

Dual-mode robot systems and methods for electronic device manufacturing

Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of a field in the reticle design pattern. The images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process. The field includes a first die and a second die. The method also includes detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values. In addition, the method includes determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.

Methods that include acquiring aerial images of a reticle for different values of a member of a set of lithographic variables are provided. One method also includes determining a presence of an anomaly in a design pattern of the reticle by comparing at least one pair of the aerial images corresponding to at least two of the different values. A different method includes comparing at least one pair of the aerial images corresponding to at least two of the different values and determining an area on the reticle where a lithography process using the reticle is most susceptible to failure based on the results of the comparison. Another embodiment includes determining a presence of transient repeating defects on the reticle by subtracting non-transient defects from the aerial images and comparing at least one pair of the aerial images corresponding to at least two of the different values.

Qualifying patterns, patterning processes, or patterning apparatus in the fabrication of microlithographic patterns

The invention is a method of determining the presence of an anomaly in qualifying a pattern, patterning process, or patterning apparatus used in the fabrication of microlithographic patterns. A preferred implementation of the method qualifies incoming reticles and process conditions on test wafers to maximize the available usable process window for a given reticle exposure tool combination. Practicing this method on test wafers enables the identification of spatial areas where a process will fail first and candidate regions for carrying out defect inspection and metrology. Other preferred implementations of the method qualify masks, reticles, or other patterns characterized by data bases on which are stored image data acquired by practice of aerial image measurement system (AIMS) or design rule checking (DRC) techniques.

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Menlo Park, CA, United States of America

Ingrid B Peterson