Siemens Aktiengesellschaft

Ingo Weitzel

Rolf Von Criegern

Rolf V Criegern

A specimen mount for secondary ion mass spectrometry, as well for other sensitive particle beam analysis methods, has a rotatable support element to which at least one carrier is secured, a specimen being affixed to a free end of the carrier. The dimensions of the carrier in directions perpendicular to the propagation direction of the ion or particle beam are smaller than the dimensions of the specimen mounted thereon, so that only the specimen, and no surrounding environment, is in the beam path. The rotatable element is driven so as to move one or more of the carriers with the specimens mounted thereon through the beam path.

Specimen mount for secondary ion mass spectrometry and other sensitive

A method and an apparatus are provided for the compensation of charges in the secondary ion mass spectrometry of specimens exhibiting poor electrical conductivity. A scanning ion gun and an electron gun allow secondary ion mass spectra specimens exhibiting poor electrical conductivity to be registered under better-defined conditions than heretofore possible. The electron beam of the electron gun is focused to approximately the same diameter as the ion beam and impinges approximately the same point on the surface of the specimen as the ion beam.

Method and apparatus for the compensation of charges in secondary ion

An electrically conductive sample support mounting for the analysis technique of secondary ion mass spectrometry employs a sample plate accommodating the sample. At the sample plate surface facing an ion beam or neutral particle beam, the sample is arranged in an environment-free fashion fully in the interior of the region impinged or scanned by the ion beam or neutral particle beam. Through the creation of a so-called orifice, interfering influences which can arise from a crater rim and from its surroundings are entirely eliminated. The invention is applied in the case of depth profile measurement of ion-implanted doping materials in semiconductor crystal disks and for the purpose of ultrasensitive trace analysis in solids.

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Taufkirchen, Germany

Ingo Weitzel