Schott Solar Ag

Schott Ag

Rwe Schott Solar Gmbh

Schott Solar Gmbh

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Ingo Schwirtlich

Hilmar Von Campe

Albrecht Seidl

Wilfried Schmidt

Matthias Mueller

Uwe Sahr

Werner Buss

Michael Clauss

Dieter Franke

Markus Finkbeiner

Frank-Thomas Lentes

Kurt Nattermann

Harry Engelmann

Frank Buellesfeld

Berthold Schum

Henning Nagel

Thomas Lauinger

Andreas Teppe

Knut Vaas

Jens Moschner

Uwe Fliedner

Matthias Müller

Sascha Reime

A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.

Method for chemically treating a substrate

The construction principles according to the present invention make possible large sheet-like solar modules with low weight, which have great mechanical toughness, are inured to rough climatic environment influences and withstand thermal stress due to solar irradiation and shadowing effects. The solar modules have front and back panes, one of which has a thickness of at least 3 mm and the other of which has a thickness of at most 2 mm. The coefficient of thermal expansion of the thicker pane is preferably greater than that of the thinner pane. In preferred embodiments burling or a wavy structure is provided on one side of the front pane and/or the back pane.

Photovoltaic modules having reduced weight

Process for producing strip-shaped and/or point-shaped electrically conducting contacts on a semiconductor component like a solar cell, includes the steps of applying a moist material forming the contacts in a desired striplike and/or point-like arrangement on at least one exterior surface of the semiconductor component; drying the moist material by heating the semiconductor component to a temperature Tand keeping the semiconductor element at temperature Tover a time t; sintering the dried material by heating the semiconductor component to a temperature Tand keeping the semiconductor component at temperature Tover a time t; cooling the semiconductor component to a temperature Tthat is equal or roughly equal to room temperature, and keeping the semiconductor component at temperature Tover a time T; cooling the semiconductor component to a temperature Twith T&#x2266;&#x2212;35&#xb0; C. and keeping the semiconductor component at temperature Tover a time T; and heating the semiconductor component to room temperature.

Method for producing electric contacts on a semiconductor component

A cutting mill for crushing broken polycrystalline needle-shaped silicon material, which contains particles that have an aspect ratio of Awith 5&#x3c;A&#x2266;30, and/or broken Si wafer consisting of laminar particles, wherein the cutting mill has an interior space that is lined with silicon and/or plastic, wherein the cutting mill has a rotational body configured as a multi-sided column, wherein said rotational body, in the regions facing the interior space of the cutting mill, is lined with silicon or features silicon, and wherein blades which run parallel with the longitudinal edges of the rotational body and are disposed in the rotational area of the rotational body, are arranged in the interior space of the cutting mill, and are adjustable with respect to the rotational body.

Method for recovering and/or recycling material

In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that the raw material that has not yet melted gradually slumps in the melting crucible. The semiconductor raw material is replenished from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted to at least partly compensate for shrinkage of the raw material and to raise the filling level. To reduce the melting time and influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated to a temperature below its melting temperature and introduced into the crucible in the heated state.

Method for producing a monocrystalline or polycrystalline semiconductor material

A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone, by means of which the oxygen content of the crystallized silicon is increased. From 50 to 250 ppm of vapor water is added to the inert gas, and the inert gas has an oxygen, CO and/or COcontent of less than 20 ppm total.

Method for producing crystallized silicon as well as crystallized silicon

The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.

Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon

Method for constructing a line or dotted structure on a support, especially for constructing strip-like electrically conducting contacts on a semiconductor component such as a solar cell, by applying an electrically conducting paste-like substance containing a solvent adhering to a support and subsequent hardening of the substance. After the substance is applied to the support, a medium containing a polar molecule is applied on the support and/or the substance, through which the solvent contained in the substance is extracted.

Method for forming a structure

A method for recovering and/or recycling starting silicon material by crushing the starting material. The recovered or recycled material is melted, and crystals, e.g. as a silicon block, tube, or strip, are grown from the obtained melt. To use starting materials that have a high aspect ratio to be able to convey the same without any problem, broken polycrystalline needle-shaped Si material (material I) containing particles having an aspect ratio A, 5&#x3c;A&#x2266;30, is used as a starting material. Material I is crushed so that the crushed particles (material II) have an aspect ratio A&#x3c;3. Alternatively, a broken Si wafer is used that is composed of laminar particles which are crushed so that the crushed particles (material III) have an aspect ratio A&#x3c;3.

The method of producing monocrystalline or multicrystalline blanks, especially silicon blanks, by using a vertical-gradient-freeze method, includes providing a crucible with a rectangular or square-shaped cross section and a heating jacket disposed around the crucible, which has a number of flat heating elements with a meandering course disposed on side faces of the crucible. The heating jacket generates an inhomogeneous temperature profile corresponding to a temperature gradient in the center of the crucible. The flat heating elements preferably comprise parallel heating webs, whose heat output is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating elements can be formed from a plurality of interconnected individual segments.

Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon

The invention relates to a method for constructing a layer structure on an especially fragile flat substrate. In order for thin, fragile flat substrates to be able to be subjected to refinement or construction of semiconductor components, a process is proposed with the steps: Applying an inorganic ceramic phase to the fragile substrate and subsequent heat treatment for hardening and sintering the inorganic ceramic material.

Method for constructing a layer structure on a substrate

The invention relates to a method for manufacture of a semiconductor component by the formation of a hydrogenous layer containing silicon on a substrate comprising or containing silicon such as a wafer or film. In order to achieve a good surface and volume passivation, it is proposed that during formation of the siliceous layer in the form of SiN O with 0<x&lE;1.5 and 0&lE;y&lE;2 one or more catalytically acting dopants are selectively added into the layer which release hydrogen from the SiN O layer. The concentration C of the dopants is 1&times;10 cm &lE;C&lE;10 cm .

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Miltenberg, Germany

Ingo Schwirtlich