Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Ingo Neudecker

Simon Jerebic

Michael Huber

Mathias Kaempf

Paola Altieri-Weimar

Guenter Spath

Korbinian Perzlmaier

Michael Zitzlsperger

Stefan Groetsch

Andreas Ploessl

Marcus Zenger

Holger Klassen

A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.

Carrier and component with a buffer layer, and method for producing a component

A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.

Component having a buffer layer and method for producing a component

Disclosed is a radiation-emitting semi-conductor chip () comprising an epitaxial semi-conductor layer sequence () which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence () is applied on a a transparent substrate (), wherein the substrate () has a first main surface () facing the semi-conductor layer sequence (), a second main surface () facing away from the semi-conductor layer sequence () and a first lateral flank () arranged between the first main surface () and the second main surface (), and the lateral flank () has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

Radiation-emitting semiconductor chip, method for producing a plurality of radiation-emitting semiconductor chips and optoelectronic component having a radiation-emitting semiconductor chip

The invention relates to an optoelectronic semiconductor chip () comprising a carrier () and a semiconductor body () having an active layer () provided for generating electromagnetic radiation. Said carrier () has a first main surface (A) facing the semiconductor body, a second main surface (B) facing away from the semiconductor body, and a sidewall (C) arranged between the first main surface and the second main surface. The carrier () has a structured region (C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component () comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.

Optoelectronic semiconductor chip, optoelectronic component and method for singulating semiconductor chips

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Wuppertal, Germany

Ingo Neudecker