Microgan Gmbh

Other

Robert Boschgmbh

Ingo Daumiller

Mike Kunze

Erhard Kohn

Markus Kamp

Matthias Seyboth

Richard Fix

Alexander Martin

Oliver Wolst

Frederik Schrey

Martin Le-Huu

Peter Benkart

Ertugrul Soenmez

An electrical circuit includes at least two unit cells configured on a planar substrate which extends in one plane. The unit cells respectively have at least two contact points with a different function and include at least one dielectric layer disposed on the substrate and/or on the unit cells and at least two contact surfaces which are disposed parallel to the plane above the contact points and/or the substrate. The contact points with the same function are connected electrically to at least one common contact surface for at least a part of the contact points of the same function via at least one through-contacting through the dielectric layer and able to be contacted in common from outside via the corresponding contact surfaces.

Electric circuit with vertical contacts

An electronic component includes a printed conductor structure on a substrate, as well as a film which contacts the printed conductor structure. The film has a smaller layer thickness than the printed conductor. The printed conductor structure has a region which is covered by the film for the purpose of contacting.

Electronic component

A semiconductor actuator includes a substrate base, a bending structure which is connected to the substrate base and can be deflected at least partially relative to the substrate base. The bending structure has semiconductor compounds on the basis of nitrides of main group III elements and at least two electrical supply contacts which impress an electrical current in or for applying an electrical voltage to the bending structure. At least two of the supply contacts are disposed at a spacing from each other respectively on the bending structure and/or integrated in the latter.

Micromechanical actuators comprising semiconductors on a group III nitride basis

The present invention relates to a sensor element which has a semiconductor structure based on a Group III-nitride. The semiconductor sensor element serves for determining the pressure, the temperature, a force, a deflection or an acceleration. It has a substrate base, disposed thereon, a homogeneous semiconductor layer based on a Group III-nitride, the surface of the homogeneous semiconductor layerorientated towards the substrate basehaving at least partially a spacing from the surface of the substrate base orientated towards the homogeneous semiconductor layerf, and being distinguished in that at least two electrical conducting contactsfor conducting an electrical output signal, which can be generated by the homogeneous semiconductor layerf, are disposed on, at or under the homogeneous semiconductor layerf or are integrated in the latter.

Sensor elements with cantilevered bar structures made of semiconductors based on group III-nitride

The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.

Heterostructure with rear-face donor doping

Growing community of inventors

Dietenheim, Germany

Ingo Daumiller