Samsung Electronics Co., Ltd.

Ingi Kim

Jung-Min Oh

Hyosan Lee

Sangwoo Bae

Minhwan Seo

Taehyun Kim

Kuntack Lee

Young-Hoo Kim

Jungchul Lee

Shinji Ueyama

Seulgi Lee

Inkeun Baek

Namil Koo

Kyoung Hwan Kim

Eunhee Jeang

Mihyun Park

Sunhong Jun

Ikseon Jeon

Tomoki Onishi

Ui-soon Park

Sangmin Lee

Jaeho Kim

Kenji Suzuki

Boun Yoon

Youngjoo Lee

Younghoon Sohn

Yusin Yang

Yasuhiro Hidaka

Tae-Hong Kim

Harutaka Sekiya

Mitsunori Numata

JunBum Park

Sungyoon Ryu

Suhwan Park

Yungjun Kim

Akinori Okubo

Wondon Joo

Sol Han

Wooktae Kim

Chae Lyoung Kim

Myeongock Ko

Gyuha Jo

Kyunghun Han

Anton Sofronov

Aleksandr Shorokhov

Anton Medvedev

Maksim Riabko

Boris Afinogenov

Eunhyuk Choi

Wontae Kim

In semiconductor inspection using second-harmonic generation within an object, a weak second-harmonic is detected at high sensitivity. In a semiconductor inspecting apparatus which irradiates a pulsed laser with a very short pulse width to a surface of a semiconductor device as the object, and measures the second-harmonic generated within the semiconductor device, a second-harmonic generation element is disposed between a light source and the object to generate a first second-harmonic. Further, the apparatus modulates a phase of only the first second-harmonic using an electric optical crystal, and then, a fundamental wave is irradiated onto the object. When the fundamental wave is irradiated onto the semiconductor device, the second-harmonic is generated therefrom. The first second-harmonic interferes with the second second-harmonic on a detector, and an intensity of the light obtained by the interfering is modulated at the same period as that of the phase modulation of the first second-harmonic. An amplitude of the second second-harmonic may be obtained from a modulated amplitude thereof, and a phase of the second second-harmonic may be measured from a modulated phase thereof.

Apparatus for inspecting surface of object

A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.

Terahertz signal measuring apparatus and measuring method

Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.

Method of extracting properties of a layer on a wafer

An inspection device improves accuracy characteristics of an (MRAM), the inspection device including a stage on which a MRAM element is fixed, and electromagnets generating a first magnetic field. A magnetic field having a component in a direction perpendicular to the stage is changeable from a first direction to a second direction according to a position on the stage. A second magnetic field in which a direction of a magnetic field component is parallel to the stage changes from a third direction to a fourth direction according to the position on the stage, an optical system illuminating the MRAM element with light including polarized light, and condensing reflected light from reflected illumination light from the MRAM element, and a detector detecting reflected light when the position of the MRAM element is changed, and when the position of the MRAM element in the second magnetic field is changed.

Inspection device

A measuring apparatus includes a first beam splitter, a diffraction grating, an optical illumination system, an optical condensing system configured to condense an electromagnetic wave EH radiated from the specimen, a time domain detector configured to detect the electromagnetic wave EH, for each time when the trigger beam, light path length of which has been changed in a delay mechanism, is incident, and a controller configured to lock-in detect the electromagnetic wave EH with a driving frequency of an amplitude modulation element, wherein the controller obtains a magnitude and a direction of an electric field of the measurement portion by Fourier transforming a time domain waveform of the detected electromagnetic wave EH to obtain a frequency domain waveform, and filtering a frequency band from the obtained frequency domain waveform.

Measuring apparatus and testing apparatus having the same

To reduce a measurement time, an inspection device includes a stage configured to fix a magnetoresistive random access memory (MRAM) to a stage surface and moving the MRAM, a plurality of magnets configured to generate a gradient magnetic, a plurality of line sensors comprising a first line sensor for detecting a magneto-optical effect at a first location of the MRAM and a second line sensor for detecting the magneto-optical effect at a second location that is different from the first location by moving a location of the MRAM within the gradient magnetic field, and an information processor configured to process the magneto-optical effect detected by the plurality of line sensors. Thus, throughput may be improved.

Provided is a polarization measuring device including a stage on which a measurement target is provided, a light source assembly configured to emit incident light, a first polarimeter configured to polarize the incident light, a second polarimeter configured to polarize reflected light reflected from the measurement target that is irradiated by the incident light, a filter assembly configured to remove noise from the reflected light, and a detector configured to receive the reflected light and measure an intensity of the reflected light and a phase of the reflected light.

Polarization measuring device and method of fabricating semiconductor device using the same

A substrate inspection apparatus includes a light source unit, a pulsed beam matching unit, a substrate support unit, an incidence angle adjusting unit, and a detecting unit. The light source unit emits a first laser beam having a first wavelength and a second laser beam having a second wavelength. The pulsed beam matching unit matches the first laser beam and the second laser beam to superimpose a pulse of the first laser beam on a pulse of the second laser beam in time and space. The substrate support unit supports a substrate to be inspected. The incidence angle adjusting unit adjusts angles of incidence of the matched first laser beam and second laser beams to irradiate the first laser beam and the second laser beam on the substrate, and mixes the first laser beam and the second laser beam to generate an evanescent wave on the substrate. The evanescent wave generates scattered light due to a defect of the substrate. The detecting unit detects the scattered light generated due to the defect of the substrate.

Substrate inspection system and method of manufacturing semiconductor device using substrate inspection system

A wafer inspection apparatus includes: an objective lens on an optical path of first and second input beams; and an image sensor configured to generate an image of the wafer based on scattered light according to a nonlinear optical phenomenon based on the first and second input beams, wherein the first input beam passing through the objective lens is obliquely incident on the wafer at a first incident angle with respect to a vertical line that is normal to an upper surface of the wafer, the second input beam passing through the objective lens is incident on the wafer at a second incident angle oblique to the vertical line that is normal to the upper surface of the wafer, and the first and second incident angles are different from each other.

Wafer inspection apparatus and system including the same

An electronic device is provided. The electronic device includes a hinge, a first housing connected to the hinge, a second housing connected to the hinge so as to fold the first housing, and a display disposed to receive support of at least a portion of the second housing from at least a portion of the first housing through the hinge. The display includes a display panel, at least one polymer member disposed at a rear surface of the display panel, and a conductive plate disposed at a rear surface of the at least one polymer member. The conductive plate includes a first flat portion facing the first housing, a second flat portion facing the second housing, and a flexible portion configured to connect the first flat portion and the second flat portion and disposed to be bendable. The flexible portion includes support pieces spaced apart from each other through slits, and a conductive elastic member configured to connect electrically and physically the first flat portion, the support pieces, and the second flat portion.

Electronic device including foldable conductive plate

A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same

A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Substrate treating apparatus

Substrate treating apparatus and method of treating substrate

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Hwaseong-si, South Korea

Ingi Kim