Nxp B.v.

Inesz Weijland

Clemens De Haas

Gerrit Bollen

Edwin Jan Schapendonk

Henk Boezen

The present invention relates to a circuit arrangement, which is used for controlling a high side CMOS transistor (M) in a high voltage deep sub micron process. To provide a circuit arrangement for switching a high side CMOS transistor (M) in a circuit having a very thin gate oxide, produced by a deep sub micron process, a circuit arrangement is proposed for controlling a high side CMOS transistor (M), wherein the high side CMOS transistor (M) is coupled between a high side voltage potential (Vbat) and a control output (OUT) for switching an external device, the high side CMOS transistor (M) is controlled at its gate by a reference potential (Vbat-Vref), which is provided by a high side voltage reference () having a capacitor (C), which is charged for switching on and discharged for switching off the high side CMOS transistor (M).

Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process

Circuit arrangement, LIN comprising such circuit arrangement as well as method for processing input signals of the LIN In order to further develop a circuit arrangement ()&#x2014;for processing at least one input signal () from at least one data bus () of at least one LIN and&#x2014;for providing the data bus () with at least one output signal (), as well as a corresponding operating method in such way that EMI performance and/or EMI performance of the LIN () is improved, it is proposed to provide&#x2014;at least one analog-digital converting circuit (ADC) for converting the analog input signal () into at least one digital signal () to be processed, and&#x2014;at least one digital-analog converting circuit (DAC) for converting the processed digital signal () into the analog output signal ().

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Malden, Netherlands

Inesz Weijland