Infineon Technologies Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Ines Uhlig

Dirk Offenberg

Dirk Meinhold

Henning Feick

Klemens Pruegl

Hermann Gruber

Uwe Hoeckele

Emanuele Bruno Bodini

Felix Braun

Thoralf Kautzsch

Hanno Melzner

Stefano Parascandola

Thomas Bever

Hans Taddiken

Anton Steltenpohl

Kerstin Kaemmer

Martin Bartels

Norbert Thyssen

Mirko Vogt

Stephan Wege

Olaf Storbeck

Christian Kuehn

Jens Zimmermann

Anjo Kirschner

Beatrice Poetschick

Bjoern Sausner

Thomas Schmitz-Huebsch

Stefan Hampl

A device for an image sensor is provided. The device includes a semiconductor device having a photo-sensitive region and a metallization stack for electrically contacting the photo-sensitive region. The photo-sensitive region is configured to generate an electric signal based on incident light. Further, the device includes an optical stack formed on a surface of the semiconductor device and configured to guide the incident light towards the photo-sensitive region. The optical stack includes a plurality of regions stacked on top of each other. The plurality of regions includes a filter region configured to selectively transmit the incident light only in a target wavelength range.

Image sensor and device for an image sensor

A device for an image sensor is provided. The device includes a semiconductor device including a photo-sensitive region configured to generate an electric signal based on incident light. Additionally, the device includes an optical element including a first surface for receiving the incident light and a second surface opposite the first surface and turned towards the photo-sensitive region. The first surface and the second surface are tilted by a tilt angle relative to each other so as to modify a direction of propagation of the incident light passing through the optical element towards a center of the photo-sensitive region to compensate for a chief ray angle of the incident light.

Device for an image sensor, image sensor for an optical camera and optical camera

Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

Method of manufacturing an imager and imager device

In accordance with an embodiment, a method for producing a buried cavity structure includes providing a mono-crystalline semiconductor substrate, producing a doped volume region in the mono-crystalline semiconductor substrate, wherein the doped volume region has an increased etching rate for a first etchant by comparison with an adjoining, undoped or more lightly doped material of the monocrystalline semiconductor substrate, forming an access opening to the doped volume region, and removing the doped semiconductor material in the doped volume region using the first etchant through the access opening to obtain the buried cavity structure.

Method for producing a buried cavity structure

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.

Controlling of photo-generated charge carriers

An apparatus and a method for producing the apparatus are described, wherein the apparatus includes a substrate with a photodetector and a dielectric arranged on the substrate. Further, the apparatus includes a microlens arranged on a first side of the dielectric. The microlens is configured to steer incident radiation onto the photodetector. Moreover, the apparatus includes a carrier-free optical interference filter. The microlens is arranged between the photodetector and the interference filter, and the interference filter has a plane surface on a side facing away from the photodetector.

Microlens having a carrier-free optical interference filter

Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

Semiconductor device with an interconnect and a method for manufacturing thereof

According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3&#xd7;10atoms per cm; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.

Switching device, a communication device, and a method for processing a carrier

A method for fabricating a trench isolation for electrically active components in a semiconductor component. A mask is applied to a semiconductor substrate. Subsequently, a trench having side walls is formed in the semiconductor substrate by performing a dry etching process using at least one etching gas such that during the dry etching process, polymers are produced that at least partly cover the side walls of the trench and thereby at least partially protect the side walls against an etching attack from the etching gas. The etching gas is provided with a compound that is selected from the group consisting of at least one hydrocarbon compound and a fluorinated hydrocarbon compound. The trench is filled with an insulating oxide.

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Dresden, Germany

Ines Uhlig