Lg Electronics Inc.

Shangrao Jinko Solar Technology Development Co., Ltd

Shangrao Xinyuan Yuedong Technology Development Co. Ltd.

Jingao Solar Co., Ltd.

Indo Chung

Ilhyoung Jung

Juhong Yang

Jeongbeom Nam

Jinah Kim

Seunghwan Shim

Eunjoo Lee

Mihee Heo

Jeonghyo Kwon

Hyungjin Kwon

Soohyun Kim

Dohwan Yang

Youngdo Kim

Taehee Shin

Dohan Kim

Sungjin Kim

Yongdae Kim

Junoh Shin

Eunhye Youn

Sungyun Park

Seunghwan Sim

Hyoungjin Kwon

The present invention relates to a display apparatus, specifically to a display apparatus using semiconductor light-emitting elements of a few micrometers to tens of micrometers in size. The present invention provides a display apparatus comprising: a base part; a partition part having a plurality of grooves; a plurality of semiconductor light-emitting elements arranged on the base part and mounted in the plurality of grooves; first and second wiring electrodes arranged on one side and the other side of each of the semiconductor light-emitting elements, respectively; an assembly electrode arranged on the base part and arranged on the one side of each of the semiconductor light-emitting elements; and a dielectric layer arranged on the base part and arranged between the assembly electrode and the first wiring electrode, wherein each of the plurality of grooves includes at least one recess portion formed in the horizontal direction with respect to the base part.

Display apparatus using semiconductor light-emitting device

A display apparatus according to the present invention comprises a substrate including semiconductor light-emitting devices and a wiring electrode electrically connected to the semiconductor light-emitting devices, wherein the substrate comprises: a base portion; assembly electrodes extending in one direction and arranged on the base portion; a dielectric layer formed to cover the assembly electrodes; a barrier portion formed on the dielectric layer while forming a cell on which the semiconductor light-emitting devices are mounted along an extension direction of the assembly electrodes; and a planarization layer formed to cover the barrier portion while forming a hole overlapping the cell, wherein the hole comprises: a first hole exposing the semiconductor light-emitting device; and a second hole exposing the dielectric layer or the base portion.

The display device can include a substrate, a first insulating layer on the substrate, first and second assembling wirings on the substrate, a second insulating layer disposed on the first and second assembling wirings and having a first hole and at least one or more second hole extending in a lateral direction of the first hole, a semiconductor light emitting device in the first hole, and a connection electrode in the second hole.

Display device

Discussed is a display device including a base portion; assembly electrodes that extend in one direction and are disposed on the base portion at predetermined intervals; a dielectric layer deposited on the base portion to cover the assembly electrodes; a first wiring electrode that extends in the same direction as the assembly electrodes and is disposed on the dielectric layer so as not to overlap the assembly electrodes; a partition wall portion deposited on the dielectric layer while arranging cells at predetermined intervals to overlap the assembly electrodes and the first wiring electrode along an extension direction of the assembly electrodes; and semiconductor light-emitting elements seated in the cells, respectively, wherein a solder layer electrically connecting a semiconductor light-emitting element seated in a cell and the first wiring electrode overlapping the cell is filled in the cell from among the plurality semiconductor light emitting elements and the cells.

Display device using semiconductor light-emitting elements, and manufacturing method therefor

The present disclosure provides a novel form of a display device which enables semiconductor light emitting elements having a vertical structure to be assembled onto a substrate and then wiring process to be performed stably without any change to the position of the elements during post-processing. The display device according to one embodiment of the present disclosure comprises: a substrate; a pair of assembly electrodes positioned on the substrate; a dielectric layer positioned on the assembly electrodes; a wiring electrode positioned on the dielectric layer and comprising a base electrode part and a low melting point junction; a partition wall which overlaps with a portion of the wiring electrode, is positioned on the dielectric layer, and defines an assembly groove to which a semiconductor light emitting element is assembled; and the vertical semiconductor light emitting element which is assembled in the assembly groove and is electrically connected to the low melting point junction of the wiring electrode, wherein the low melting point junction has a flow stop angle for controlling the thermal flow characteristic of the junction.

Display device using micro LED, and manufacturing method therefor

The present specification provides a new type of a display device in which a wiring process is easily performed after a semiconductor light emitting element having a vertical structure is assembled on a substrate. Here, a semiconductor light emitting device according to an embodiment of the present invention is characterized by comprising: a substrate; a wiring electrode positioned on the substrate; a dielectric film positioned on the wiring electrode; an assembly electrode positioned on the dielectric film; an assembly insulating film positioned on the assembly electrode; a partition wall positioned on the assembly insulting film and defining an assembly groove to which a semiconductor light emitting element is assembled; and the semiconductor light emitting element which is assembled to the assembly groove and provided with conductive electrodes on both ends thereof, wherein the wiring electrode is provided with a protrusion portion, and the protrusion portion protrudes toward the assembly groove and is electrically connected to the conductive electrode on one end of the semiconductor light emitting element.

Display device using micro LED and method for manufacturing same

Disclosed is a solar cell. The solar cell includes a semiconductor substrate, conductivity-type regions located in or on the semiconductor substrate, electrodes conductively connected to the conductivity-type regions, and insulating films located on at least one of opposite surfaces of the semiconductor substrate, and including a first film and a second film located on the first film, the second film has a higher carbon content than that of the first film, a refractive index of the second film is equal to or less than a refractive index of the first film, and an extinction coefficient of the second film is equal to or greater than an extinction coefficient of the first film.

Solar cell

Disclosed is a solar cell including a semiconductor substrate, a conductive area including a first conductive area and a second conductive area formed on one surface of the semiconductor substrate, a passivation film formed on the conductive area, the passivation film having a contact hole, a protective film formed on the conductive area inside the contact hole, the protective film being formed on at least one of at least a portion of an inner side surface of the contact hole and the passivation film, and an electrode electrically connected to the conductive area through the contact hole with the protective film interposed therebetween.

Solar cell and method of manufacturing the same

Disclosed is a solar cell including a semiconductor substrate, a protective-film layer on a surface of the semiconductor substrate, a polycrystalline semiconductor layer over the protective-film layer, a first conductive area formed by selectively doping the semiconductor layer with a first conductive dopant, a second conductive area doped with a second conductive dopant and located between neighboring portions of the first conductive area, an undoped barrier area located between the first conductive area and the second conductive area, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. Each of the first conductive area and the second conductive area includes a second crystalline area having a crystalline structure different from that of the barrier area, and the second crystalline areas of the first and second conductive areas include a second polycrystalline area and a fourth crystalline area having different depths.

A solar cell includes a semiconductor substrate; at least one conductive type region on the semiconductor substrate; a protective layer on the at least one conductive type region; and an electrode disposed on the protective layer and electrically connected to the conductive type region.

Solar cell and method for manufacturing the same

A solar cell can include a semiconductor substrate; a tunneling layer formed over the semiconductor substrate; a conductive area located over the tunneling layer, the conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type; and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, wherein a mark is located in at least one of the first conductive area and the second conductive area, and has a different shape from that of a crystal plane of the semiconductor substrate and the conductive area, and wherein the mark is formed along a longitudinally extending edge of at least one of the first conductive area and the second conductive area.

Discussed is a solar cell includes a semiconductor substrate, a conductive type region including a first conductive type region and a second conductive type region formed on one surface of the semiconductor substrate, an electrode including a first electrode and a second electrode, wherein the first electrode is connected to the first conductive type region and the second electrode is connected to the second conductive type region, and a passivation layer formed on the conductive type region. The passivation layer includes at least one of silicon nitride and silicon carbide.

A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.

Disclosed is a method of manufacturing a solar cell, the method including forming a tunneling layer over one surface of a semiconductor substrate, forming a semiconductor layer over the tunneling layer, forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer, and forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The forming of the conductive area includes forming a mask layer over the semiconductor layer, forming a doping opening corresponding to at least one of the first conductive area and the second conductive area in the mask layer using a laser, and performing doping using the doping opening.

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Seoul, South Korea

Indo Chung