International Business Machines Corporation

Indira P V Seshadri

Sivananda K Kanakasabapathy

Ruqiang Bao

Andrew Mark Greene

Rajasekhar Venigalla

David Lee Rath

Kisup Chung

Ekmini Anuja De Silva

Yongan Xu

Yann A M Mignot

Isabel C Estrada-Raygoza

An additive core subtractive liner method is described for forming electrically conductive contacts. The method can include forming a first trench in an first dielectric layer to expose a first portion of a metal liner, and filling said first trench with a second dielectric layer. A metal cut trench is formed in the second dielectric layer. A portion of the metal liner exposed by the metal cut trench is removed with a subtractive method. The method continues with filling the metal cut trench with a dielectric fill, and replacing the remaining portions of the second dielectric layer with an additive core conductor to provide contacts to remaining portions of the metal liner.

Additive core subtractive liner for metal cut etch processes

An additive core subtractive liner method is described for forming electrically conductive contacts. The method can include forming a first trench in a first dielectric layer to expose a first portion of a metal liner, and filling said first trench with a second dielectric layer. A metal cut trench is formed in the second dielectric layer. A portion of the metal liner exposed by the metal cut trench is removed with a subtractive method. The method continues with filling the metal cut trench with a dielectric fill, and replacing the remaining portions of the second dielectric layer with an additive core conductor to provide contacts to remaining portions of the metal liner.

Embodiments are directed to a method of forming a semiconductor device and resulting structures having a hard masks for sidewall image transfer (SIT) block patterning. The method includes forming a first hard mask on a substrate. Spacers are formed on the first hard mask, and a second hard mask is formed over the spacers. The second hard mask and a portion of the first hard mask are concurrently removed by the same hard mask removal process to expose a surface of the substrate. After concurrently removing the second hard mask and portions of the first hard mask, the heights of the spacers are substantially equal.

Hard masks for block patterning

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Troy, NY, United States of America

Indira P V Seshadri