Samsung Led Co., Ltd.

Samsung Electronics Co., Ltd.

Amolifescience Co., Ltd.

In Tae Yeo

Hun Joo Hahm

Young Sam Park

Kyung Taeg Han

Ho Sik Ahn

Chang Ho Song

Seong Yeon Han

Yoon Sung Na

Dong Woo Kim

In Yong Seo

Won Joon Lee

Su Yeol Lee

Dae Yeon Kim

Seok Beom Choi

Bang Won Oh

Tae Sung Jang

Sang Ho Yoon

Song Hee Koo

Jong Gun Woo

Ji Hyun Lee

Doo Go Baik

Seon Ho Jang

Dae Cheon Kim

Provided is a heating patch. The heating patch includes: a flexible plate-shaped base substrate; an electrode portion including a pair of lead electrodes formed on at least one surface of the base substrate along a longitudinal direction to be spaced apart along a width direction of the base substrate, and a pair of branch electrodes extending from the lead electrodes along the width direction of the base substrate to be not electrically connected to each other and to be overlapped with each other; a heating portion including a conductive heating material disposed in an overlapped part between the branch electrodes which have a predetermined area and face each other to generate heat while conducting the pair of branch electrodes to each other; and a pair of cover members disposed on both sides of the base substrate to prevent the electrode portion and the heating portion from being exposed externally.

Heating patch, and warming device for skin care comprising same

An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.

Light emitting diode package and fabrication method thereof

In a direct-type backlight unit, a board has upper and lower surfaces defining a thickness therebetween. A plurality of unit light sources are disposed on the board. Here, in each of the unit light sources, a wiring pattern is formed on the board. A light emitting device is disposed on the wiring pattern to electrically connect thereto. A non-conductive side wall surrounds, without interruption, the light emitting device at a predetermined interval therefrom, the non-conductive side wall having a height lower than that of the light emitting device. Also, an encapsulant is formed in a dome shape inside the side wall. In this fashion, the light emitting devices are mounted on the board by a chip-on-board technique.

Direct-type backlight unit having surface light source

A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

Vertical gallium nitride-based light emitting diode and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

In Tae Yeo