Samsung Electronics Co., Ltd.

In Sung Joe

Tae Hoon Kim

Ji Su Kim

Min Kyung Kim

Minho Jang

Kyoung Ho Ha

Minkwan Kim

Seong Gu Kim

Sung Dong Suh

Kyoung Won Na

Min Kwan Kim

Dong Jae Shin

Yong Hwack Shin

Taehyoung Kim

Hyunchul Kim

Donghyun Kim

Kyoung Lae Cho

Kisang Yoon

Kwang Soo Seol

Jung Chak Ahn

Minkyung Kim

Masaru Ishii

Hyunil Byun

Ho-Chul Ji

Hongki Kim

Yoon Sun Park

Jeongsoon Kang

Junhong Kim

Hong Ki Kim

Chang Kyu Lee

Sung Ii Park

Seungkuk Kang

Inyong Park

Jinhyung Kim

Dhami Park

Kyoungwon Na

Hyun Young Yeo

Jinsun Pyo

An image sensor includes a substrate, a pixel isolation pattern in the substrate and defining unit pixel regions in the substrate, color filters on the substrate and corresponding to the unit pixel regions, respectively, a low-refractive index pattern between adjacent color filters of the color filters to at least partially isolate the adjacent color filters from direct contact with each other, an insulating structure between the substrate and the color filters, and a light blocking pattern vertically overlapping with the pixel isolation pattern. The light blocking pattern is within the insulating structure and is isolated from direct contact with the low-refractive index pattern.

Image sensor

An image sensor includes; a substrate including a first surface and a second surface; a first pixel region; a second pixel region; a third pixel region; a first lens on the first pixel region; a second lens on the second pixel region and the third pixel region; an element separation film in the substrate and being interposed between the first pixel region and the second pixel region; a first color filter to transmit light focused by the second lens to the second pixel region and the third pixel region; a color filter grid forming a region in which the first color filter is provided. The color filter grid includes a metal layer; and a protective film on the color filter grid and in contact with the first lens and the second lens. The first lens is on the second surface.

Image sensor including color filter grid including portion overlapping super phase detection (PD) pixel

An image sensor includes a first chip that includes a pixel region and a pad region, and a second chip that is in contact with one surface of the first chip and includes circuits that drive the first chip. The first chip includes a first substrate, an interlayer insulating layer disposed between the first substrate and the second chip, first interconnection lines disposed in the interlayer insulating layer, a conductive pad disposed in the pad region between the second chip and the first interconnection lines, and a recess region formed in the pad region that penetrates the first substrate and the interlayer insulating layer and exposes the conductive pad.

Image sensor with aluminum grid pattern having openings and copper dummy patterns covering the openings

An image sensor includes a first substrate including a focus pixel region and pixel regions around the focus pixel region, each of the focus pixel region and the pixel regions including at least one photoelectric conversion region, color filters provided on the focus pixel region and the pixel regions, respectively, and on a first surface of the first substrate, and micro lenses provided on the color filters, respectively. The micro lenses include an auto-focus lens on the focus pixel region, a first micro lens adjacent to the auto-focus lens, and a standard micro lens spaced apart from the auto-focus lens.

An image sensor a substrate comprising a first surface and a second surface opposite to the first surface; a first pixel region; a second pixel region; a third pixel region; a first lens on the first pixel region; a second lens on the second and third pixel regions; an element separation film provided in the substrate and interposed between the first pixel region the second pixel region; a first color filter configured to transmit light focused by the second lens to the second pixel region and the third pixel region; and a color filter grid forming a region in which the first color filter is provided. A width of the first pixel region in a first direction is between 0.5 um and 0.9 um. The first lens is disposed on the second surface. The first direction is parallel to the second surface.

Provided is an image sensor including a substrate, an element separation film provided on the substrate and having a mesh shape, a plurality of pixel regions formed by the element separation film, the plurality of pixel regions including a first pixel region and a second pixel region that is adjacent to the first pixel region, the element separation film being interposed between the first pixel region and the second pixel region, a first lens provided to extend along the first pixel region and the second pixel region, a first color filter configured to transmit light focused by the first lens to the first pixel region and the second pixel region, and a color filter grid forming a region in which the first color filter is provided, and at least partially overlapping the first pixel region and the second pixel region in a vertical direction.

An image sensor and a method of manufacturing thereof are provided. The image sensor includes a substrate, a grid structure, and color filters. The substrate includes a pixel separation structure defining pixel regions, and a sub-pixel regions for each pixel region. The grid structure is disposed on the substrate and includes first fence segments provided between the sub-pixel regions, and second fence segments provided between neighboring pixel regions. The grid structure defines openings corresponding respectively to the sub-pixel regions. The color filters are disposed in the openings defined by the grid structure. Each of the color filters has a flat top surface and the flat top surface of each color filter is parallel to a bottom surface thereof.

An image sensor includes a substrate having a first surface, a charge storage portion disposed in the substrate, a light-blocking pattern disposed on the first surface overlapping the charge storage portion, and a low-refractive index pattern on the light-blocking pattern.

An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate including photoelectric elements, a first color filter disposed on the substrate, a second color filter disposed on the substrate to be adjacent to the first color filter, a covering film disposed between sidewalls of the first and second color filters, and an air gap formed in the covering film.

Image sensor and method of fabricating the same

A memory system in accordance with an embodiment of the inventive concept includes a memory controller comprising a controller optical transmission unit photoelectrically-converting a data signal to output a first optical modulation signal and a second optical modulation signal, a first memory device which is optically connected with the memory controller to receive the first optical modulation signal, and a second memory device which is optically connected with the memory controller to receive the second optical modulation signal. The first optical modulation signal and the second optical modulation signal are complementary to each other.

Memory controller, memory system including the same, and electronic device including the memory system

A data processing system may include: a first device; a second device; and an optical link connected between the first and second devices. The optical link may include a main optical waveguide configured to transmit an optical signal output from the second device; N sub-optical waveguides; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguides; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each one of the N sub-optical waveguides. Each of the N sub-optical waveguides may include a first region formed at a first distance from the main optical waveguide; a second region formed at a second, greater distance from the main optical waveguide; and a third region for connecting the first and second regions.

Data processing systems, systems on chip, and data processing systems comprising systems on chip

An optical link may include a main optical waveguide; N sub-optical waveguides, where N is a natural number; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguide; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each of the N sub-optical waveguides. A memory system may include a memory device, a memory controller, and the optical link. A data processing system may include the memory system and a central processing unit connected to the memory system through a bus.

Optical links, manufacturing methods thereof, and memory systems having the same

Provided is a memory module, a system using the memory module, and a method of fabricating the memory module. The memory module may include a printed circuit board and a memory package on the printed circuit board. The printed circuit board may include an embedded optical waveguide and a first optical window extending from the optical waveguide to a first surface of the printed circuit board. The memory package may also include a memory die having an optical input/output section and a second optical window. The optical input/output section, the second optical window, and the first optical window may be arranged in a line and the first optical window and the second optical window may be configured to at least one of transmit an optical signal from the optical waveguide to the optical input/output section and transmit an optical signal from the optical input/output section to the optical waveguide.

Memory module, memory system having the memory module, and method for manufacturing the memory module

Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.

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Seoul, South Korea

In Sung Joe