Samsung Electronics Co., Ltd.

Leland Stanford Junior University

Korea Advanced Institute of Science and Technology

In-sung Joe

Yoon-Dong Park

Kyoung-ho Ha

Seong-gu Kim

Sung-Dong Suh

Young-Gu Jin

Seung-hoon Lee

Dong-jae Shin

Soo-Haeng Cho

Pil-Kyu Kang

Kyoung-won Na

Young-gu Jin

Ho-Chul Ji

Ki-jae Song

Jin-kwon Bok

Yeoung-kum Kim

Ki-Nam Kim

Dong-hyun Kim

Kyoung Lae Cho

Won-Joo Kim

Kwang Soo Seol

Jae-woong Hyun

Sung-Il Park

Kwang-Soo Seol

Masaru Ishii

Tae-hyoung Kim

Dae-lok Bae

Moon-seung Yang

Ho-chul Ji

Yong-woo Hyung

Seung-Hyuk Chang

Dae-kil Cha

Yoon-dong Park

Keun-yeong Cho

Ju-hwan Yi

Jung-hoon Shin

David Andrew Barclay Miller

Min-ho Jang

Jee-soo Chang

Sung-II Park

An image sensor includes a semiconductor substrate having opposite first and second surfaces, a wiring structure on the first surface of the semiconductor substrate, and a refractive structure on the second surface of the semiconductor substrate. The refractive structure includes a first anti-reflective layer on the second surface of the semiconductor substrate, a refractive pattern on the first anti-reflective layer, an insulation layer on the first anti-reflective layer, and a second anti-reflective layer on the refractive pattern and the insulation layer. The refractive pattern includes first refractive parts spaced apart from each other in a first direction parallel to the second surface of the semiconductor substrate, and the insulation layer fills spaces between the first refractive parts.

Image sensor

Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.

Hybrid silicon lasers on bulk silicon substrates

An optical integrated circuit (IC) package includes an optical IC including an optical IC substrate, an optical IC including an optical IC substrate, an electrical integrated circuit device (EICD) on the optical IC substrate, at least one optical device spaced apart from the EICD on the optical IC substrate, an optical interface on a first side of the optical IC substrate, an electrical interface located on a second side of the optical IC substrate, and an encapsulation member configured to encapsulate the optical IC, the EICD, the at least one optical device, the optical interface, and the electrical interface.

Optical integrated circuit package

Semiconductor apparatuses having optical connections between a memory controller and a memory module are provided. A semiconductor apparatus includes a memory controller, at least one socket configured to receive a memory module, and a first optical-electrical module. A second optical-electrical module is mounted in the socket and optically coupled to the first optical-electrical module via at least one optical channel.

Semiconductor apparatuses having optical connections between memory controller and memory module

An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.

Optical modulator formed on bulk-silicon substrate

Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Optical waveguide and coupler apparatus and method of manufacturing the same

A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.

Memory system, memory test system and method of testing memory system and memory test system

Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.

Memory device and method of storing data with error correction using codewords

A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.

Semiconductor memory devices, controllers, and semiconductor memory systems

Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.

Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same

Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.

Photodiodes, image sensing devices and image sensors

An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked.

Optical amplifying medium, method of manufacturing the optical amplifying medium, and optical device comprising the optical amplifying medium

Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.

Data storage devices using magnetic domain wall movement and methods of operating the same

Provided are methods of operating NAND nonvolatile memory devices. The operating methods include applying a read voltage or a verify voltage to a selected memory cell from among a plurality of memory cells of a cell string to verify or read a programmed state of the selected memory cell; applying a first pass voltage to non-selected memory cells closest to the selected memory cell of the cell string; applying a second pass voltage to second closest non-selected memory cells to the selected memory cell; and applying a third pass voltage to other non-selected memory cells, where the first pass voltage is less than each of the second and third pass voltages and the second pass voltage is greater than the third pass voltage.

Methods of operating memory devices

Growing community of inventors

Seoul, South Korea

In-sung Joe