Samsung Electronics Co., Ltd.

Seoul National University

In Su Shin

Dong Hyun Lee

Jin Sub Lee

Jung Sub Kim

Kyung Wook Hwang

Eui Joon Yoon

Gun Do Lee

Jeong Hwan Jang

A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlInGaN (0&#x2264;x+y&#x2264;1, 0&#x2264;y&#x3c;0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5&#x2264;n(&#x3bb;)&#xd7;D/&#x3bb;&#x2264;5.0, where &#x3bb; represents a wavelength of light generated by the active layer, n(&#x3bb;) represents a refractive index of the plurality of nanorods at a wavelength of &#x3bb;, and D represents diameters of the plurality of nanorods.

Semiconductor ultraviolet light emitting device having improved light extraction efficiency

Growing community of inventors

Incheon, South Korea

In Su Shin