Skhynix Inc.

In Seob Noh

Jong Kyung Park

A memory device includes memory cells connected to a selected word line; a peripheral circuit configured to perform a first program operation of programming a threshold voltage of each of memory cells to a pre-threshold voltage less than a target threshold voltage, and perform a second program operation of programming the threshold voltage of each of the memory cells to the target threshold voltage after the first program operation is performed; and control logic configured to control the peripheral circuit so that a first pass voltage and a second pass voltage are sequentially applied to adjacent word lines, when a program voltage is applied to the selected word line, in the first program operation and the second program operation. A magnitude of the second pass voltage in the first program operation may be greater than a magnitude of the second pass voltage in the second program operation.

Growing community of inventors

Icheon-si, South Korea

In Seob Noh