Samsung Electronics Co., Ltd.

Korea University Industrial Academic Collaboration Foundation

Yonsei University

In Sang Song

Duck Hwan Kim

Jea Shik Shin

Chul Kyu Kim

Sang Uk Son

Moon Chul Lee

Ho Soo Park

Hyung Rak Kim

Yun Kwon Park

Young Il Kim

Jae Chun Lee

Jeashik Shin

Moonchul Lee

Hosoo Park

Chul Soo Kim

Dal Ahn

Jing Cui

Byeong Kwon Ju

Cui Jing

Jun Chul Kim

Jae-Sung Rieh

Seong Chan Jun

Jie Ai Yu

Jae Shik Shin

Sang Wook Kwon

Soo Hyun Kim

Jun Sik Hwang

Seong Joong Kim

Dong Su Kim

Sung Woo Hwang

Hee Tae Kim

Woon Bae Kim

Dong Hoon Hwang

Jae Sung Rieh

Jong Oh Kwon

Chang Yul Moon

Young Kim, Ii

Che Heung Kim

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

Resonance apparatus for processing electrical loss using conductive material and method for manufacturing the same

Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.

Bulk acoustic wave resonator

Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

Method for manufacturing resonance apparatus

A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.

Thin film bulk acoustic resonator and method for manufacturing same

A method of measuring biological sample properties and a biological sample property measuring apparatus is provided. A method of measuring biological sample properties includes disposing a biomaterial to contact a sensing unit, detecting a radio frequency (RF) signal flowing through the sensing unit, and obtaining an RF property indicator of the biomaterial based on the detected RF signal.

Method of measuring biological sample properties and biological sample property measuring apparatus

A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.

Radio frequency filter and manufacturing method thereof

A filter using bulk acoustic wave resonators (BAWRs) is provided including BAWRs connected in series or in parallel to each other. A BAWR set is configured by connecting an inductance and capacitance (L/C) element to each BAWR in series or in parallel.

Filter using BAWRs and L/C elements connected to the BAWRs

A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.

Bulk acoustic wave resonator having a plurality of compensation layers and duplexer using same

Provided are a matching segment circuit, to which a radio frequency (RF) is applied, and an RF integrated device using the matching segment circuit. The matching segment circuit to which an RF is applied may include an input end connected to a first RF device, a parallel segment having a first capacitor and a first inductor connected in parallel, a second inductor connected to the parallel segment in series, and an output end connected to a second RF device. The first capacitor, the first inductor, and the second inductor may be configured so that an impedance of the first RF device and an impedance of the second RF device may match.

Matching segment circuit to which radio frequency is applied and radio frequency integrated devices using the matching segment circuit

Growing community of inventors

Osan-si, South Korea

In Sang Song