Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Korea University Industrial Academic Collaboration Foundation

Samsung Electro-mechanics Co., Ltd.

Seoul National University

In-sang Song

Yun-kwon Park

Sang-Wook Kwon

Jong-seok Kim

Duck-hwan Kim

Byeoung-ju Ha

Kuang-woo Nam

Young-tack Hong

Seok-chul Yun

Chul-soo Kim

Sang-Hun Lee

Che-Heung Kim

Seog-woo Hong

Hae-seok Park

Dong-ha Shim

Young-tack Houng

Moon-chul Lee

Kuang-Woo Nam

Woon-bae Kim

Dong-kyun Kim

Hyung Ki Choi

Il-Jong Song

Sung-hoon Choa

Joo-ho Lee

Jun-sik Hwang

Jong-Seok Kim

Eun-seok Park

Chang-seung Lee

Kyu-Dong Jung

Byung-gil Jeong

Jea-Shik Shin

Suk-jin Ham

Jea-shik Shin

Seok Lee

Kangwon Lee

Eun-sung Lee

Jong-oh Kwon

Hee-moon Jeong

Seung Seob Lee

Phillip Lee

Ji-Hyuk Lim

Byeong-kwon Ju

Jae-Sung Rieh

Sang-Chul Sul

Kyung-Man Kim

Seok-Mo Chang

Young-Min Park

Jin-Woo Lee

Young-il Kim

Chung-woo Kim

Min-seog Choi

Jung-Eun Lee

Jun-o Kim

Chang-won Jung

Song-cheol Hong

Dal Ahn

Sun-hee Park

Jeong-geun Kim

Jung-han Choi

Sung-hye Jeong

Jeong-yoo Hong

Byeong-ju Ha

Kwi-soo Kim

Hye-Jin Kim

Young-jun Park

Young-Eil Kim

Young-woo Park

In-Taek Han

Kyu-sik Kim

Jong-Hyuk Kim

In-Ku Kang

Sang-wook Park

Sung-woo Hwang

Hee-Tae Kim

Seung-jin Oh

Kook-hyun Sunwoo

Joon-hee Lee

Ji-Seok Hong

Seung-tae Choi

Kae-dong Back

Nam-Kyoo Park

Sang-Sub Song

Jung-Han Choi

Young-ho Cho

Dong-ki Min

Sang-soo Ko

Kuk-jin Chun

Wang-Ju Lee

Sang-chae Kim

Sang-Won Yun

Yong-Kyu Kim

Seok-mo Chang

Sang-chul Sul

Seok-Keun Lim

In-Wook Jung

Bong-Ken Yu

Yun-Kwon Park

Sung-Chan Kang

Jae-Shik Shin

Byung-yoo Hong

A method of fabricating a multi-band filter module is provided. The method includes forming a Film Bulk Acoustic Resonator (FBAR) on a piezoelectric substrate by forming a resonant part on the piezoelectric substrate and then an air gap recessed on a surface of the piezoelectric substrate and positioned under the resonant part; and forming a Surface Acoustic Wave (SAW) device on the piezoelectric substrate in which the steps of forming the FBAR and the SAW are concurrently performed.

Multi-band filter module and electronic device comprising the same

The semiconductor package includes: a package substrate comprising a bonding pad; a plurality of semiconductor chips stacked on the package substrate; and a bonding wire configured to electrically connect the semiconductor chips and the bonding pad. For at least one of the plurality of semiconductor chips: the semiconductor chip comprises: a semiconductor device; a first pad electrically connected to the semiconductor device; a conductive pattern; and a second pad electrically connected to the first pad, spaced apart from the conductive pattern, and extending over the conductive pattern; and the bonding wire is connected to the second pad.

Semiconductor package and method of forming

A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.

Resonator and fabrication method thereof

The present disclosure provides a memory device and a fabricating method thereof. The memory device includes a substrate including a first metal layer formed therein, the first metal layer having at least a first surface with at least a first exposed portion of the first surface exposed at a lateral surface of the substrate, at least a first semiconductor chip formed on a top surface of the substrate, and a second metal layer surrounding the first semiconductor chip and extending to lateral surfaces of the substrate, at least a first portion of the second metal layer contacting the exposed surface of the first metal layer.

Memory device and fabricating method thereof

A semiconductor device includes a substrate, a semiconductor chip, a first molding member and a metal layer. The substrate includes a first ground pad formed therein, the first ground pad having a first exposed surface exposed at a first surface of the substrate. The semiconductor chip is formed on the first surface of the substrate. The first molding member is formed on the first surface of the substrate and covers the semiconductor chip while not covering the first exposed surface. The metal layer covers the first molding member and extends to lateral surfaces of the substrate while contacting the first exposed surface.

Semiconductor packaging for a memory device and a fabricating method thereof

An electronic apparatus includes a main board, a semiconductor package, an upper conductive EMI shield member, and a lower conductive EMI shield member. The main board includes a first ground pad. The semiconductor package is spaced apart from and electrically connected to the main board. The upper conductive EMI shield member covers a top surface and a sidewall of the semiconductor package. The lower conductive EMI shield member surrounds a space between the main board and the semiconductor package, and is electrically connected to the upper conductive EMI shield member and the first ground pad.

Electronic devices including EMI shield structures for semiconductor packages and methods of fabricating the same

A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

Method of manufacturing a monolithic duplexer

A semiconductor device includes a first semiconductor package having at least one first semiconductor chip and a first sealing member covering the at least one first semiconductor chip. The semiconductor device also includes a second semiconductor package stacked on the first semiconductor package. The second semiconductor package has at least one second semiconductor chip, leads electrically connected to the at least one second semiconductor chip, and a second sealing member covering the at least one second semiconductor chip. At least one signal connection member is disposed in the first sealing member of the first semiconductor package. The at least one signal connection member electrically connects the at least one first semiconductor chip with the leads of the at least one second semiconductor chip.

Stack type semiconductor package apparatus

A balance filter packaging chip having a balun mounted therein and a manufacturing method thereof are provided. The balance filter packaging chip includes a device substrate; a balance filter mounted on the device substrate; a bonding layer stacked on a certain area of the device substrate; a packaging substrate having a cavity formed over the balance filter, and combined with the device substrate by the bonding layer; a balun located on a certain area over the packaging substrate; and an insulator layer for passivating the balun. Accordingly, the present invention can reduce an element size and simplify a manufacturing process.

Balance filter packaging chip having balun mounted therein and manufacturing method thereof

Provided is a semiconductor package. The semiconductor package may include a first semiconductor package having first semiconductor chips sequentially stacked on a substrate. In example embodiments, the first semiconductor chips may have a cascaded arrangement in which first sides and second sides of the semiconductor chips define cascade patterns. The cascaded arrangement may extend in a first direction to define a space between the first sides of the first semiconductor chips and the substrate. The semiconductor package may also include at least one first connection wiring at the second sides of the semiconductor chips, the at least one first connection wiring being configured to electrically connect the substrate with the first semiconductor chips. In addition, the semiconductor package may further include a first filling auxiliary structure adjacent to the first sides of the first semiconductor chips.

Semiconductor package, semiconductor package structure including the semiconductor package, and mobile phone including the semiconductor package structure

A semiconductor package includes a first package including a first substrate and at least one first semiconductor chip mounted on the first substrate, a redistribution wiring layer provided on the first package and including a connection pad, a bonding pad electrically connected to the connection pad and a dummy bonding pad electrically connected to the bonding pad, a second package stacked on the first package via the redistribution wiring layer and electrically connected to the connection pad of the redistribution wiring layer by a first connection member, a bonding wire electrically connecting the bonding pad to the first substrate, and a dummy bonding wire electrically connecting the dummy bonding pad to the first substrate.

Semiconductor device packages stacked together having a redistribution layer

The semiconductor package structure includes first and second packages. The first package has at least one first semiconductor chip disposed on a first printed circuit board, and at least one first pad disposed on the at least one first semiconductor chip. The second package has at least one second pad disposed on the first package, and at least one second semiconductor chip disposed on the at least one second pad. The at least one first semiconductor chip is electrically connected to the first printed circuit board. The at least one second pad is electrically connected to the at least one second semiconductor chip. The at least one second pad faces the at least one first pad.

Semiconductor package structure having plural packages in a stacked arrangement

A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.

Tunable resonator and tunable filter

A Micro Electro Mechanical System (MEMS) switch includes a substrate, a fixed signal line formed on the substrate, a movable signal line spaced apart from one of an upper surface and a lower surface of the fixed signal line, and at least one piezoelectric actuator connected to a first end of the movable signal line so as to bring or separate the movable signal line in contact with or from the fixed signal line. The piezoelectric actuator includes a first electrode, a piezoelectric layer formed on the first electrode, a second electrode formed on the piezoelectric layer, and a connecting layer formed on the second electrode and connected with the movable signal line.

MEMS switch

Growing community of inventors

Seoul, South Korea

In-sang Song