Leland Stanford Junior University

Seoul National University

Kyungpook National University Industry-academic Cooperation Foundation

In Man Kang

Byung-Gook Park

Seongjae Cho

Compound tunneling field effect transistors integrated on a silicon substrate are provided with increased tunneling efficiency and an abrupt band slope by forming a source region with a material having a bandgap at least 0.4 electron volts (eV) narrower than that of silicon to increase a driving current (ON current) by forming a channel region with a material having almost no difference in lattice constant from a source region and having a high electron mobility at least 5 times higher than silicon. ON/OFF current ratio simultaneously is increased by forming a drain region with a material having a bandgap at least as wide as a channel region material to restrain OFF current. Tunneling field effect transistors having various threshold voltages according to circuit designs are formed easily by adding a specific material with an electron affinity less than a source region material when forming a channel region.

Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the same

The present invention provides a silicon-compatible compound junctionless field effect transistor enabled to be compatible to a bulk silicon substrate for substituting an expensive SOI substrate, to form a blocking semiconductor layer between a silicon substrate and an active layer by a semiconductor material having a specific difference of energy bandgap from that of the active layer to substitute a prior buried oxide for blocking a leakage current at an off-operation time and to form the active layer by a semiconductor layer having electron or hole mobility higher than that of silicon, and to operate perfectly as a junctionless device though the dopant concentration of the active layer is much lower than the prior junctionless device.

Growing community of inventors

Daegu, South Korea

In Man Kang