Samsung Electronics Co., Ltd.

In-Kyun Shin

Seong-Woon Choi

Myung-Ah Kang

Hee-sun Yoon

Sung-Hyuck Kim

Jung-Min Sohn

Gi-Sung Yoon

Sung-Min Huh

Ji-Soong Park

An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.

Method of fabricating chrome-less phase shift mask

A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.

Methods, systems and computer program products for correcting photomask using aerial images and boundary regions

A method of manufacturing a chromeless phase shift mask includes forming a photoresist film pattern on a wafer using a basic form of the chromeless phase shift mask and measuring a specification of the photoresist film pattern. The basic form of the chromeless phase shift mask is isotropically etched to modify the phase shifter of the mask unless the photoresist film pattern specification is within a specified range. Accordingly, an application-specific chromeless phase shift mask can be produced for use in any exposure apparatus and under any exposure condition.

Method of manufacturing chromeless phase shift mask

A method of manufacturing an alternating phase shift mask can be carried out in a short amount of time. A 180&#xb0; phase shift region is formed using a multi-step etching process, and then a 0&#xb0; phase region is formed. Forming the phase shift regions in this sequence minimizes the number of rounds of photolithography that have to be carried out in the method.

Method of manufacturing an alternating phase shift mask

A photomask that is capable of implementing off-axis illumination (OAI), and a method of fabricating the same, are provided. The photomask includes a transparent substrate, a plurality of opaque patterns formed on the front surface of the transparent substrate, for defining a floodlighting portion for forming patterns, and a plurality of phase gratings formed on the back surface of the transparent substrate, allowing off-axis illumination (OAI) of an incident light source beyond the OAI limit of exposure equipment, allowing use in the outmost region of an aperture, and allowing modified illumination having a shape suitable for the layout of the opaque patterns.

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Suwon, South Korea

In-Kyun Shin