Samsung Electronics Co., Ltd.

Samsugn Electronics Co., Ltd.

In-kyeong Yoo

Jae-Ho Lee

Sun-Ae Seo

Soo-hwan Jeong

Chang-jung Kim

Ho-jung Kim

Dong-wook Kim

Myoung-jae Lee

Won-bong Choi

Chang-Wook Moon

Byong-man Kim

David Seo

Seung-hoon Han

Wan-jun Park

Dong-Wook Kim

Eun-hong Lee

June-key Lee

Choong-rae Cho

Sung-il Cho

Jung-hyun Sok

In-sook Kim

Young-soo Park

Jai-kwang Shin

Hong-seok Lee

Sang-Yoon Lee

Seung-bum Hong

Kyung-Eun Byun

Ki-ha Hong

Hyeon-jin Shin

Ju-Hwan Jung

Jae-ho Lee

Seong-jun Park

Seong-ho Cho

Hyun-Jae Song

Sun-kook Kim

Jae-uk Chu

In-Sook Kim

Hyun-jo Kim

Chul-woo Park

I-hun Song

Moon Gyu Han

Sung-chul Lee

Hyun-jong Chung

Seung-eon Ahn

Jin-seong Heo

Young-Bae Kim

Sang-Hun Jeon

Dong-seok Suh

U-in Chung

Yun-sung Woo

Dong-Wook Lee

Il-Sub Chung

Hyun-jung Shin

Moon-gyu Han

Hyeon-Jin Shin

Chan-hee Lee

Min-Hyun Lee

Ju-hye Ko

Chang-wook Moon

Hyun-Jong Chung

Jin-Seong Heo

Yun-Sung Woo

Seong-Jun Park

An acousto-optic device capable of increasing a range of a diffraction angle of output light by using a nanostructured acousto-optic medium, and an optical scanner, an optical modulator, a two-dimensional/three-dimensional (2D/3D) conversion stereoscopic image display apparatus, and a holographic display apparatus using the acousto-optic device. The acousto-optic device may include a nanostructured acousto-optic medium formed by at least two different mediums repeatedly alternating with each other, wherein at least one of the at least two different mediums includes an acousto-optic medium. The acousto-optic device having the aforementioned structure may increase the range of a diffraction angle of output light. Thus, various systems such as the optical scanner, the optical modulator, the 2D/3D conversion stereoscopic image display apparatus, and the holographic display apparatus may not require a separate optical system to increase an operational angle range, thereby decreasing a size of the system and/or improving a resolution of the system.

Nanostructured acousto-optic device, and optical scanner, optical modulator, and holographic display apparatus using the nanostructured acousto-optic device

According to example embodiments, a graphene device includes a first electrode, a first insulation layer on the first electrode, an information storage layer on the first insulation layer, a second insulation layer on the information storage layer, a graphene layer on the second insulation layer, a third insulation layer on a first region of the graphene layer, a second electrode on the third insulation layer, and a third electrode on a second region of the graphene layer.

Graphene device and method of manufacturing the same

A color optical pen includes a tip unit, a pen body unit attached to the tip unit; a pressure sensor that is disposed in the tip unit and configured to sense at least contact between a display unit of a terminal device and the tip unit; a light source that is disposed in the pen body unit and is configured to output light through the tip unit, if the pressure sensor senses the contact; a color selection switch that is disposed on the pen body, the color selection switch configured to select a color in response to operation by a user; and a driver configured to drive the light source at a frequency or pattern based on operation of the color selection switch.

Color optical pen for electronic panel

Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

Nonvolatile memory transistor and device including the same

A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Graphene device and electronic apparatus

A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.

Graphene device including separated junction contacts and method of manufacturing the same

Provided are a storage medium, which has a security function, for storing media content and an output apparatus for outputting data stored in the storage medium. The storage medium includes a controller for converting at least one of a position of pins of a connector and a storage position of media content in a memory unit in order to control transmission of the media content in the memory unit to the output apparatus.

Data storage medium having security function and output apparatus therefor

An apparatus for displaying a three-dimensional (3D) image may include a plurality of display panels and a controller configured to apply image signals to each of the plurality of display panels. At least one of the display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction. A method of displaying a three-dimensional (3D) image may include displaying plane images on each of a plurality of display panels. At least one of the plurality of display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction.

Apparatuses for and methods of displaying three-dimensional images

An optical element and an information storage device including the same. The optical element may include an optical waveguide structure for transforming circularly polarized light into plasmon and transmitting the plasmon. The optical waveguide structure may emit a circularly polarized plasmonic field. The optical element may be used in an information storage device. For example, the information storage device may include a recording medium and a recording element for recording information on the recording medium, and the recording element may include the optical element. The information may be recorded on the recording medium by using the circularly polarized plasmonic field generated by the optical element.

Optical elements including light sources and waveguides and information storage devices including the same

A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.

Storage devices having a security function and methods of securing data stored in the storage device

A nonvolatile memory device may include a lower electrode, an oxide layer including an amorphous alloy metal oxide disposed on the lower electrode, and a diode structure disposed on the oxide layer.

Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the same

Semiconductor devices including variable resistance materials and methods of operating the semiconductor devices. The semiconductor devices use variable resistance materials with resistances that vary according to applied voltages as channel layers.

Semiconductor devices including variable resistance materials and methods of operating the same

The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.

Non-volatile memory device and method of manufacturing the same

A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.

Nonvolatile memory cells and nonvolatile memory devices including the same

Growing community of inventors

Suwon, South Korea

In-kyeong Yoo