Electronics and Telecommunications Research Institute

In Kwon Ju

In Bok Yom

Seong Mo Moon

Byoung Hak Kim

Dong Hwan Shin

Dong Pil Chang

Jin Cheol Jeong

Jun Han Lim

Provided is a FET resistive frequency mixing device having improved RF-LO and IF-LO isolations. The frequency mixing device includes: a field effect transistor (FET), a local oscillation matching circuit connected to a gate of the FET to transfer a local oscillation signal to the gate of the FET, a gate biasing circuit connected to the gate of the FET, a radio frequency (RF) matching circuit having a first terminal connected to a drain side of the FET and a second terminal serving as a RF terminal to receive or output a RF signal, an intermediate frequency (IF) matching circuit having a first terminal connected to the drain side of the FET and a second terminal serving as an IF terminal to receive or output an IF signal, and a series resonance circuit providing a path from the drain of the FET to ground for the local oscillation signal.

Frequency mixing device

Provided is a microwave power combiner. A 2-way microwave power combiner includes a first input stage and a second input stage each through which a microwave signal is input; a first output stage through which a sum signal between the microwave signals is output, in response to the microwave signals input through the first input stage and the second input stage having the same phase; and a second output stage through which a difference signal between the microwave signals is output, in response to the microwave signals input through the first input stage and the second input stage having different phases. The first input stage, the second input stage, the first output stage, and the second output stage are connected using a suspended line that includes a conductive line positioned on a dielectric layer provided between air layers.

Microwave power combiner

A high-frequency high-power terminator is disclosed. Specifically, the high-frequency high-power terminator has a new structure which uses a resistive element in a distributed element form to achieve broadband matching and to have improved rated power.

High-frequency high-power terminator

An ultra wideband hermetically sealed surface mount package for a microwave monolithic integrated circuit (MMIC) is provided including: an integrated circuit; a package body being mounted with the integrated circuit and comprising a plurality of first dielectrics formed in a multilayer, a first line unit mounted to a circuit substrate and is electrically connected with an external circuit, a second line unit upwardly extended from the first line unit and is electrically connected with the first line unit, a third line unit extended to the right angle from the second line unit and is electrically connected with the second line unit, and a bonding unit that electrically connects the third line unit and the mounted integrated circuit; and a package cover being formed on the package body to seal the integrated circuit and comprising a plurality of second dielectrics formed in a multilayer.

Ultra wideband hermetically sealed surface mount technology for microwave monolithic integrated circuit package

A high speed flip-flop circuit and a configuration method thereof are provided. A small number of transistors may be used to configure a flip-flop circuit, so that the flip-flop circuit may be operated at a high-speed. Additionally, an area occupied by the flip-flop circuit may be reduced, and power consumption may be reduced. Accordingly, the flip-flop circuit may be integrated together with a microwave frequency integrated circuit using a Gallium Arsenide (GaAs) compound semiconductor process.

Growing community of inventors

Daejeon, South Korea

In Kwon Ju