Lg Electronics Inc.

Lg Innotek Co., Ltd.

Inopla Inc.

Komico Technology, Inc.

In-kwon Jeong

Myung Cheol Yoo

Jong-Lam Lee

Jong Lam Lee

David Eric Berkstresser

Jino Park

Jerry J Berkstresser

A light-emitting device can include a conductive support structure comprising a metal; a GaN-based semiconductor structure disposed on the conductive support structure, the GaN-based semiconductor structure including a p-type GaN-based layer, a GaN-based active layer and an n-type GaN-based layer, in which the GaN-based semiconductor structure has a first surface, a side surface and a second surface, in which the first surface, relative to the second surface, is proximate to the conductive support structure, in which the second surface is opposite to the first surface, in which the conductive support structure is thicker than the p-type GaN-based semiconductor layer, and the conductive support structure is thicker than the n-type GaN-based semiconductor layer; a p-type electrode disposed on the conductive support structure; an n-type electrode disposed on the second surface of the GaN-based semiconductor structure; and a passivation layer disposed on the side surface and the second surface of the GaN-based semiconductor structure.

Vertical structure LEDs

A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surface of the GaN-based semiconductor structure and on an entire side surface of the GaN-based semiconductor structure, in which a first part formed on the upper surface of the GaN-based semiconductor structure in the insulating layer contacts the upper surface of the GaN-based semiconductor structure and a side surface of the n-type electrode, and a second part formed on the entire side surface of the GaN-based semiconductor structure in the insulating layer does not contact the n-type electrode.

A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.

A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surfaces.

A vertical light emitting diode structure, comprising: a support structure including a support substrate and a metallic layer, the metallic layer being disposed on the support substrate; a GaN-based semiconductor structure including a first-type semiconductor layer on the support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, a thickness of the GaN-based semiconductor structure from the bottom surface to the top surface being less than 5 micro meters, and a ratio of a thickness of the second-type semiconductor layer to the thickness of the GaN-based semiconductor structure being not less than 60%; a first contact layer disposed between the support structure and the GaN-based semiconductor structure to be electrically connected to the first-type semiconductor layer, a thickness of the first contact layer being less than the thickness of the first-type semiconductor layer; a second contact layer disposed on the GaN-based semiconductor structure to be electrically connected to the second-type semiconductor layer, the second contact layer including titanium and aluminum; a metal pad disposed on the second contact layer, the metal pad including gold; and a passivation layer being in contact with the support structure, the passivation layer extending from the support structure to the top surface of the GaN-based semiconductor structure via the side surface of the GaN-based semiconductor structure.

A vertical structure light-emitting device includes a conductive support, a light-emitting semiconductor structure disposed on the conductive support structure, the semiconductor structure having a first semiconductor surface, a side semiconductor surface and a second semiconductor surface, a first electrode electrically connected to the first-type semiconductor layer, a second electrode electrically connected to the second-type semiconductor layer, wherein the second electrode has a first electrode surface, a side electrode surface and a second electrode surface, wherein the first electrode surface, relative to the second electrode surface, is proximate to the semiconductor structure; and wherein the second electrode surface is opposite to the first electrode surface, and a passivation layer disposed on the side semiconductor surface and the second semiconductor surface.

A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Method of fabricating vertical structure LEDs

A polishing apparatus for polishing semiconductor wafers comprises a main polishing structure, which includes a plurality of polishing tables, a plurality of polishing heads and a plurality of load-and-unload stations, and an add-on polishing structure, which includes an additional polishing table and an additional polishing head. The add-on polishing structure can be attached to the main polishing structure to form a larger polishing structure with the additional polishing table and the additional polishing head.

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Cupertino, CA, United States of America

In-kwon Jeong