Samsung Electronics Co., Ltd.

Pixelplus Co., Ltd.

In-Jun Hwang

Tae-wan Kim

Kee-won Kim

Sang-jin Park

Young-jin Cho

Seung-Jun Lee

Wan-jun Park

Kwang-seok Kim

Hyung-soon Shin

Sun-ae Seo

Richard Joseph Gambino

Young-Jin Cho

Won-Cheol Jeong

Sung-hoon Choa

Young-Keun Kim

Soon-ju Kwon

Yoon-Dong Park

Sang-Moo Choi

Sang-min Shin

Kwang-soo Seol

Ju-hee Park

Chee-kheng Lim

Sung-Chul Lee

Jae-woong Hyun

Hyuk-Soon Choi

Eun-sik Kim

Seung-Yeon Lee

Kae-won Kim

Jai-Kwang Shin

Jae-Joon Oh

Jong-Seob Kim

Ki-Ha Hong

The present invention relates to a video decoding system having a compensation function, the video decoding system comprising: one AD converter; a synchronized signal level detector for detecting a synchronized signal level using a digital signal output from the AD converter; a color burst level detector for detecting a color burst level using the digital signal output from the AD converter; a compensation apparatus for compensating the video level and the high frequency components of an analog signal by using information detected by the synchronized signal level detector and the color burst level detector, and for compensating and transmitting a synchronized signal level to the AD converter; and a decoding apparatus for outputting a digital component image signal (YCrCb) using the digital signal output from the AD converter.

Video decoding system having compensation function

The present invention relates to an image quality adaptive video security system, a security camera generating an original video signal from a camera sensor, inserting an image quality discrimination signal including image quality information for video to the original video signal and generating a video signal. A DVR system determines whether a video signal from a security camera is transmitted in an analog transmission scheme or in a digital transmission scheme. In the case of the analog transmission scheme, the DVR system decodes the analog video signal to a first digital component video signal and detects image quality information. In a case of the digital transmission scheme, the DVR system converts the digital video signal to a digital second component video signal and detects image quality information. A video processing unit scales, compresses, stores or displays the first or the second component video signal with reference to the image quality information of the detected analog or digital video signal.

Transmission scheme and image quality adaptive security camera and DVR system

A magnetic memory device includes: a free layer for storing information; and a reference layer disposed on a first surface of the free layer. The reference layer includes at least two magnetic domains and a magnetic domain wall between the at least two magnetic domains. The reference layer extends past both ends of the free layer. The magnetic memory device further includes a switching element connected to a second surface of the free layer. Another magnetic memory device includes: a first reference layer having a first magnetic domain wall; a second reference layer having a second magnetic domain wall; and a memory structure between the first and second reference layers. The memory structure includes: a first free layer adjacent to the first reference layer; a second free layer adjacent to the second reference layer; and a switching element between the first and second free layers.

Magnetic memory devices and methods of operating the same

Provided is a multi-stack memory device that includes a storage unit group including a plurality of storage units that are vertically stacked and form a plurality of storage unit rows, and a plurality of transistors connected to the storage unit group, wherein the transistors that are connected to the storage units which are included in at least two rows of the plurality of the storage unit rows and are connected by a common wire. The common wire may be a gate line or a bit line.

Multi-stack memory device

An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

Magnetic memory device and method

Example embodiments may provide a magnetic memory device. The example embodiment magnetic memory devices may include a plurality of memory tracks, bit lines, connectors, a first input portion, and/or selectors. The memory track(s) may be stacked on a substrate to form a multi-stack. A plurality of magnetic domains may be formed in the memory track so that a data bit may be represented by a magnetic domain and may be stored in an array. The bit line(s) may be formed along respective memory tracks. The connector(s) may form a magnetic tunnel junction (MTJ) cell with one data bit region of the memory track. The first input portion may be electrically connected to each memory track and may input a magnetic domain motion signal to move data stored on a data bit region of the memory track to an adjoining data bit region. The selector(s) may select a memory track from a plurality of memory tracks on which a reading and/or writing operation may to be performed.

Magnetic memory device using magnetic domain motion

A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.

Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same

Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.

Method of operating magnetic random access memory device

Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.

Memory device employing magnetic domain wall movement

Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.

Data storage device using magnetic domain wall movement and method of operating the same

Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween

A semiconductor device using a magnetic domain wall movement and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a magnetic layer that is formed on a substrate and has a plurality of magnetic domains, and a unit that supplies energy to move a magnetic domain wall in the magnetic layer. The magnetic layer is formed parallel to the substrate, and includes a plurality of prominences and a plurality of depressions alternately formed along a lengthwise direction thereof. The magnetic layer has a stepped form that secures a reliable movement of the magnetic domain wall in units of one bit.

Semiconductor device using magnetic domain wall movement and method of manufacturing the same

Method of manufacturing a multi-purpose magnetic film structure

Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.

Growing community of inventors

Yongin-si, South Korea

In-Jun Hwang