Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

In Joon Pyeon

Dong Woo Kim

Su Yeol Lee

Hyoun Soo Shin

Tae Jun Kim

Hyun Ju Park

Jae Joon Yoon

Sung Soo Park

There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Nitride semiconductor light emitting device and method of manufacturing the same

Light-emitting diode

Growing community of inventors

Gyunggi-do, South Korea

In Joon Pyeon