Cheil Industries Inc.

In Hwan Kim

Baek Soung Park

Jae Won Choi

Sung Min Kim

Ki Tae Song

Jun Woo Lee

Su Mi Lim

Dong Seon Uh

Gyu Seok Song

Su Ml Im

An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120&#xb0; C. to 130&#xb0; C. for 1 to 20 minutes, a second stage at a temperature ranging from 140&#xb0; C. to 150&#xb0; C. for 1 to 10 minutes, a third stage at a temperature ranging from 160&#xb0; C. to 180&#xb0; C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160&#xb0; C. to 180&#xb0; C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.

Adhesive composition for semiconductor and adhesive film including the same

A dicing die-bonding film and a method of forming a groove in a dicing die-bonding film, the film including a base film; a pressure-sensitive adhesive layer stacked on the base film; and a bonding layer stacked on the pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer includes a first region overlapping with the bonding layer, and a second region not overlapping with the bonding layer, the second region including a third region adjacent to the first region, and a fourth region adjacent to the third region and having a groove formed therein.

Dicing die-bonding film and method of forming a cut on the dicing die-bonding film

A heat dissipation adhesive film, a semiconductor device including the same, and a method of fabricating the semiconductor device, the heat dissipation adhesive film being placeable between a protective layer encasing a semiconductor element therein and a heat dissipation metal layer on the protective layer to bond the protective layer to the heat dissipation metal layer, wherein an adhesive strength between the heat dissipation adhesive film and the protective layer and an adhesive strength between the heat dissipation adhesive film and the heat dissipation metal layer are each about 3 kgf/25 mmor greater.

Adhesive film for heat dissipation, semiconductor device including the same, and method of fabricating the semiconductor device

An adhesive composition for a semiconductor has two exothermic peaks between 65&#xb0; C. and 350&#xb0; C. and has an area ratio of voids of less than 10%, measured after curing at 150&#xb0; C. for 10 minutes and then at 150&#xb0; C. for 30 minutes, and then molding at 175&#xb0; C. for 60 seconds. A first exothermic peak appears between 65&#xb0; C. and 185&#xb0; C. and a second exothermic peak appears between 155&#xb0; C. and 350&#xb0; C.

Adhesive composition for semiconductor and adhesive film comprising the same

An adhesive composition for semiconductors, an adhesive film prepared using the adhesive composition, and a semiconductor device including the adhesive film, the adhesive composition exhibiting two exothermic peaks at temperatures ranging from 65&#xb0; C. to 350&#xb0; C., wherein a first exothermic peak appears at a lower temperature than a second exothermic peak, and the adhesive composition has a curing rate of about 70% to 100% in a first exothermic peak zone, as calculated by Equation 1:Curing rate=[(Heating value upon 0 cycle&#x2212;Heating value after 1 cycle)/Heating value upon 0 cycle]&#xd7;100.

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Uiwang-si, South Korea

In Hwan Kim