Samsung Electronics Co., Ltd.

In-Hwan Doh

Joo-Young Hwang

Chan-Ik Park

Byoung-Geun Kim

Seung-Uk Shin

Min-Seok Ko

Jae-Yoon Choi

Young-Ho Park

Chul Ju Lee

Nam-wook Kang

Hyun-Jin Choi

Sung-Hwan Bae

Seong-Jun Ahn

Byung-Hei Jun

Kwang-Hun Lee

In-Sung Song

A storage device includes a non-volatile memory including a plurality of memory blocks. The storage device performs an alignment operation in response to receipt of an align command. The alignment operation converts a received logical address of a logical segment into a physical address and allocates the physical address to a physical block address corresponding to a free block. The storage device is further configured to performs a garbage collection in units of the physical block address that indicates one memory block.

Storage device configured to perform an alignment operation and storage system including the same

A method of operating a storage device to perform a garbage collection operation on a nonvolatile memory device having a plurality of memory blocks, the storage device configured to operate based on a multi-stream scheme such that a plurality of data is written into the plurality of memory blocks based on which of a plurality of streams is associated with the plurality of data. The method may include selecting at least two memory blocks among the plurality of memory blocks as victim memory blocks such that the victim memory blocks are configured to store data associated with a same stream of the plurality of streams; and performing the garbage collection operation on the victim memory blocks.

Method of performing garbage collection, storage device performing the same and computing system including the same

In a data management method for a storage device, the storage device includes a nonvolatile memory device including a plurality of memory blocks. A TRIM-after-COPY command is received from an external host such that a data compaction operation is performed on a first storage region. Valid data stored in the first storage region are internally copied into a second storage region based on the TRIM-after-COPY command. A TRIM operation is performed based on the TRIM-after-COPY command to update a logical-to-physical address mapping table and a valid page bitmap.

Data management method and storage device performing the same

In an operating method of a memory controller, the memory controller includes a logical-to-logical (L2L) mapping table including mapping information between a first logical area and a second logical area and a logical-to-physical (L2P) mapping table including mapping information between the second logical area and a physical area of a memory device. The operating method includes receiving a first logical address of the first logical area and a first command for changing the L2L mapping table to access first data stored in the memory device through the first logical address, detecting a second logical address of the second logical area mapped to a physical address of the physical area in which the first data is stored, in response to the first command, and changing the L2L mapping table to map the first logical address to the second logical address.

Memory controller, nonvolatile memory system, and operating method thereof

A method of processing input/output (I/O) in a storage device includes adjusting a read anticipation time based on a change of a resource management status related to operations of the storage device and performing an I/O processing operation at the storage device based on the adjusted read anticipation time. The I/O processing operation is performed to postpone an operation regarding a program command and perform a read command at higher priority than a write command at the storage device in a period from completion of a read operation at the storage device until the read anticipation time has elapsed.

Method of processing input/output in storage device and storage device and non-volatile memory device using the method

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Seoul, South Korea

In-Hwan Doh