Samsung Electronics Co., Ltd.

Osong Medical Innovation Foundation

The Sl Co., Ltd.

In-Ho Song

Sang-Gab Kim

Sung-Chul Kang

Ho-Min Kang

Hee-Hwan Choe

Je-Min Lee

Joon-Hoo Choi

Ho Young Lee

Beohm-Rock Choi

Jin-Won Kim

Byong-mo Moon

Sung-min Yim

Sung-Keun Yoo

Dong-Jun Moon

Seung H Tak

Jin-Woo Ahn

Ha-Chul Jung

Seung-A Lee

Jin-Hee Moon

Gwan-Young Cho

Jong-Tae Jeong

Kwan-young Cho

Sang-Hun Lee

Byoung Kyu Shon

Seung Hwan Tak

Disclosed are faucet control device and method. A faucet control device capable of automatic temperature control comprises: a first pressure sensor and a second pressure sensor installed in a hot water pipe and a cold water pipe to measure the pressures of hot water and cold water, respectively; a first temperature sensor and a second temperature sensor installed in the hot water pipe and the cold water pipe to measure the temperatures of the hot water and the cold water, respectively; a heating member disposed between the hot water pipe and a faucet; a rotation sensor for measuring at least one of a horizontal rotation angle and a vertical rotation angle when an operation of a faucet knob terminates; a first electronic valve and a second electronic valve installed on discharge ports of the hot water and the cold water, respectively; and a controller for determining a stop position of the faucet knob by using at least one of the horizontal rotation angle and the vertical rotation angle and controlling whether to operate the heating member and the opening degrees of the first electronic valve and the second electronic valve according to the determined stop position of the faucet knob by using the pressures of the hot water and the cold water and the temperatures of the hot water and the cold water.

Faucet control device and method, and faucet

A method of manufacturing a feedthrough having an enhanced hermetic sealing and used for a human implantable medical device such as a deep brain stimulator, a implantable AED, a implantable spinal cord stimulator and so on. Thus, more enhanced reproducibility and productivity in the diffusion welding and the laser hole machining may be guaranteed in the present method of manufacturing the feedthrough, compared to the conventional method using the ceramic metallizing and the brazing.

Method of manufacturing feedthrough

A method of manufacturing a thin film array panel is provided, which includes: forming a gate line formed on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact layer on the semiconductor layer; forming a data line and a drain electrode disposed at least on the ohmic contact layer, forming an oxide on the data line; etching the ohmic contact layer using the data line and the drain electrode as an etch mask; and forming a pixel electrode connected to the drain electrode.

Thin film array panel and manufacturing method thereof

A method of manufacturing a thin film array panel is provided, which includes: forming a gate line formed on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact layer on the semiconductor layer; forming a data line and a drain electrode disposed at least on the ohmic contact layer; forming an oxide on the data line; etching the ohmic contact layer using the data line and the drain electrode as an etch mask; and forming a pixel electrode connected to the drain electrode.

The present invention relates to a thin film transistor array panel, a liquid crystal display, and a manufacturing method of the same. A TFT array for a LCD or an EL display is used as a circuit board for driving the respective pixels in an independent manner. The present invention provides pixel electrodes and contact assistants, which connect expansions of gate lines and data lines to an external circuit, having a structure of double layers including IZO layer and ITO layer. The ITO layer is disposed on the IZO layer. In the present invention, the pixel electrodes are formed to have double layers of IZO layer and ITO layer to avoid wires from getting damage by the ITO etchant and to prevent prove pins from having accumulation of foreign body during the gross test. In the present invention, the contact assistants may only be formed to have double layers of IZO layer and ITO layer to prevent prove pins from having accumulation of foreign body during the gross test. Since the consumption of ITO is reduced, manufacturing cost decreases.

Thin film transistor array panel and method of manufacturing the same

A passivation layer assembly and a display substrate having the same are presented. The passivation layer assembly is positioned on a substrate having a thin film assembly and protects the thin film assembly. The thin film assembly includes a first passivation layer and a second passivation layer. The first passivation layer contacts the thin film assembly. The first passivation layer has a first etching rate with respect to an etching agent. The second passivation layer is on the first passivation layer. The second passivation layer has a second etching rate that is higher than the first etching rate with respect to the etching agent. The passivation assembly decrease the malfunction rate of the display device.

Passivation layer assembly on a substrate and display substrate having the same

An apparatus and method for measuring the electrical characteristics of a semiconductor device in a packaged state, which includes an electrical characteristic measurer which is connected to an electrical element whose electrical characteristics are to be measured and to one pad of the semiconductor device. The measurer is driven in response to a control signal, and outputs a value indicative of the electrical characteristics of the electrical element to the pad. The measurer includes at least an NMOS threshold voltage measurer, an NMOS saturation current measurer, a PMOS threshold voltage measurer, a PMOS saturation current measurer, and a resistance measurer. An accurate electrical characteristic value can be obtained by measuring the characteristics of the element within a semiconductor device in a finished packaged product. In view of the accurate measurement, degradation of characteristics of the semiconductor device and malfunction thereof can be prevented.

Apparatus and method for measuring electrical characteristics of a semiconductor element in a packaged semiconductor device

Growing community of inventors

Seoul, South Korea

In-Ho Song