Dongbu Electronics, Co. Ltd.

Dongbu Anam Semiconductor, Inc.

In Gyun Jeon

Kwang Soo Kim

Jinsu Han

Jin Su Han

Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion area. The CMOS image sensor generally includes a photodiode and a plurality of transistors (e.g., transfer, reset, drive, and select transistors), a first conductive type semiconductor substrate, having an active area including a photodiode area, a floating diffusion area, and a voltage input/output area, a gate electrode of each transistor on the active area, a first conductive type first well area in the semiconductor substrate corresponding to the voltage input/output area, a first conductive type second well area in the semiconductor substrate corresponding to the floating diffusion area, and a second conductive type diffusion area in the semiconductor substrate at opposed sides of each gate electrode.

CMOS image sensor and method for manufacturing the same

A CMOS image sensor and manufacturing method thereof are disclosed. The present CMOS image sensor comprises: a semiconductor substrate including an active region having a photo diode region and a transistor region; a gate on the active region, comprising a gate insulating layer and a gate electrode thereon; a first source/drain diffusion region in the transistor region at one side of the gate electrode, including a first conductivity type dopant; a second photo diode diffusion region in the region at the other side of the gate electrode, the second diffusion region including a first conductivity type dopant; insulating sidewalls on sides of the gate electrode; and a third diffusion region over or in the second diffusion region, extending below one of the insulating sidewalls (e.g., closest to the photo diode region), and including a second conductivity type dopant.

Provided is a CMOS image sensor and method of manufacturing same. The CMOS image sensor includes a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor. A device isolation layer is formed on a first conductive type substrate. Gate electrodes of the transfer transistor, the reset transistor, the drive transistor, and the select transistor are formed on an active region of the substrate with gate insulating layers interposed therebetween. A first diffusion region is formed of a second conductive type in a first region of the active region, where the first region does not include a floating diffusion region between the transfer transistor and the reset transistor and the photodiode region. A second diffusion region is formed of the second conductive type in the floating diffusion region at a concentration lower than that of the second conductive type first diffusion region.

Method for manufacturing a CMOS image sensor

Disclosed are a CMOS image sensor and a method for manufacturing the same, for reducing or preventing damage to a photodiode and improving a pixel design margin to achieve scale down of a pixel. The CMOS image sensor includes an isolation layer in a semiconductor substrate, a gate electrode crossing a part of the isolation layer and the active area, a photodiode area in the active area, an insulating sidewall spacer on sides of the gate electrode, a metal silicide layer on the gate electrode and at least part of a surface of the photodiode area adjacent to the gate electrode, a metal layer electrically connecting the gate electrode to the photodiode area, and a dielectric layer on the entire surface of semiconductor substrate.

CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.

CMOS image sensors

A CMOS image sensor and a method for fabricating the same are disclosed, in which transfer characteristics are improved. The method includes forming a photodiode region and a second conductive type ion region on a surface of a first conductive type substrate by implanting a second conductive type impurity ion into an entire surface of the substrate where a transistor is to be formed, forming a second conductive type lightly doped ion region in the substrate corresponding to the photodiode region by lightly implanting a second conductive type impurity ion only in an area where the photodiode region is opened, and diffusing the second conductive type lightly doped ion region into the second conductive type ion region by a thermal process.

Method for fabricating CMOS image sensor

A method of fabricating a CMOS image sensor is provided. The fabricating method includes: forming a gate electrode with a gate insulating layer interposed at a transistor region of a semiconductor substrate having an active region defined by a photodiode region and a transistor region; forming a first impurity region of a first conductive type at the transistor region of one side of the gate electrode; forming a first sidewall and a second sidewall at both sides of the gate electrode; forming a second impurity region of the first conductive type at the transistor region of the one side of the gate electrode; applying a photoresist layer on the semiconductor substrate, and patterning the photoresist layer to cover the transistor region through an exposing and developing process; forming a third impurity region of a second conductive type at the photodiode region using the patterned photoresist as a mask; selectively removing the first sidewall insulating layer between the second sidewall insulating layer and the gate electrode at a predetermined thickness using the patterned photoresist layer as a mask; covering the gate electrode by reflowing the patterned photoresist layer at a predetermined temperature; selectively removing the second sidewall insulating layer using the reflowed photoresist layer as a mask; and forming a fourth impurity region of the first conductive type at the side of the gate electrode where the third impurity region is formed using the reflowed photoresist layer as a mask.

A method for fabricating a CMOS image sensor is provided. The method includes: forming a gate electrode with a gate insulating layer interposed on a transistor region of a semiconductor substrate having an active region defined by a photo diode and a transistor region; forming a first impurity region of a first conductive type at a transistor region at one side of the gate electrode; forming a second impurity region of a first conductive type at a photo diode region at other side of the gate electrode; forming sidewall insulating layers at both sides of the gate electrode; forming a third impurity region of a first conductive type at one side of a gate electrode where the first impurity region is formed; and forming a fourth impurity region of a second conductive type at the gate electrode, the photodiode region and the transistor region by implanting impurity ions of a second conductive type on the entire surface of the semiconductor substrate.

A method for fabricating a photodiode of a CMOS image sensor is disclosed, to improve a charge accumulation capacity in the photodiode, which includes the steps of defining a semiconductor substrate as an active area and a field area by forming an STI layer; firstly implanting impurity ions for formation of the photodiode to the semiconductor substrate of the active area; secondarily implanting impurity ions for formation of the photodiode to the semiconductor substrate being adjacent to the STI layer; and forming a photodiode ion-implantation diffusion layer by diffusing the implanted impurity ions with a thermal process.

Method for fabricating photodiode of CMOS image sensor

A phototransistor of a CMOS image sensor suitable for decreasing the size of layout, and a method for fabricating the phototransistor are disclosed, in which the phototransistor includes a first conductive type semiconductor substrate; an STI layer on the first conductive type semiconductor substrate, to define an active area and a device isolation area in the first conductive type semiconductor substrate; a second conductive type well in the first conductive type semiconductor substrate; a gate line on the first conductive type semiconductor substrate; an ohmic contact layer in the second conductive type well, wherein the ohmic contact layer is overlapped with the gate line in state of interposing the STI layer therebetween; and a contact to connect the gate line with the ohmic contact layer through the STI layer.

Phototransistor of CMOS image sensor and method for fabricating the same

An image sensor and a method of manufacturing the same are disclosed. When forming an impurity region for a photodiode, the photodiode can be exposed by reducing the impurity region. Thus, a depletion region of the photodiode, formed when the sensor operates, extends to the exposed surface of the photodiode through the inner region of the photodiode, so that it is possible for the photodiode to normally absorb short wavelength light as well as long wavelength light at its depletion region. Also, the uniformity of the generation of photo electrons depending on the different colors of lights can be optimized, and the color presentation quality can be further enhanced.

Image sensor and method of manufacturing the same

CMOS image sensors and methods for fabricating the same

A CMOS image sensor and a method for manufacturing the same, capable of preventing an interface between an active region and a field region in the CMOS image sensor from being damaged by ion implantation. The method comprises implanting dopant ions into a source region between a gate electrode of the reset transistor and the photodiode, using an ion implantation mask that covers predetermined locations of the field region and the source region.

An example CMOS image sensor has pixel units and protection regions. The pixel unit has a light sensing region for converting an incident light into an electrical signal and an active region for controlling the transfer of the electrical signal. Each pixel unit is isolated by an element isolation layer. The protection region, which is located between each element isolation layer, prevents crosstalk generated between each pixel unit while the incident light is converted to the electrical signal. The protection region may include a well and a junction.

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Gunpo-si, South Korea

In Gyun Jeon