Electronics and Telecommunications Research Institute

Gachon University of Industry-Academic Cooperation Foundation

In Gyoo Kim

Gyungock Kim

Sang Hoon Kim

Ki Seok Jang

Jaegyu Park

JiHo Joo

Sun Ae Kim

Jin Hyuk Oh

Jiho Joo

Sang Gi Kim

Yongseok Choi

Hyuk Je Kwon

Hyundai Park

Dae Seo Park

Myung Joon Kwack

In-Kyu You

Jeong Woo Park

Junghyung Pyo

Sahnggi Park

Do Won Kim

Bit Na Kim

Jun Taek Hong

Tae-young Kim

Sunghoon Hong

Yong Suk Yang

Sanghoon Kim

Duk Jun Kim

Gyung Ock Kim

Dongwoo Suh

Myungjoon Kwack

Kap-Joong Kim

Jongbum You

Seok Hun Kang

Sung-Hoon Jung

Seung-Jun Park

Ki Seok Chang

Ji Hwan Sul

A method for preparing a three-dimensional graphene structure, and an energy storage device are provided, the method including forming a graphene precursor by heating a carbohydrate and a gas generator, forming a graphene structure having a cavity therein by carbonizing the graphene precursor, and forming nanopores in the graphene structure, wherein the nanopores pass through an outer surface and an inner surface of the graphene structure, and are connected with the cavity.

Method for preparing three-dimensional graphene structure and energy storage device

Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Opto-electronic system including optical input/output device

Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.

Laser device and methods for manufacturing the same

Disclosed are an apparatus for manufacturing electrodes and a method of manufacturing electrodes. The method of manufacturing electrodes includes providing a metal substrate having first and second surfaces opposite to each other, performing a patterning process on the first surface of the metal substrate, coating an electrode material on the first surface of the metal substrate, after the patterning process, and irradiating the electrode material, which is coated on the metal substrate, with light. The patterning process includes forming a plurality of holes to penetrate the metal substrate or forming a plurality of grooves to have a shape recessed from the first surface toward the second surface.

Apparatus and method for manufacturing electrodes

Method of manufacturing optical input/output device

Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

Photodetector

Optical input/output device, optical electronic system including the same, and method of manufacturing the same

Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof.

Electro-absorption optical modulation device and method of fabricating the same

Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.

Semiconductor laser and method of fabricating the same

Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Low-voltage high-gain high-speed germanium photo detector and method of fabricating the same

The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Semiconductor laser device and method of fabricating the same

Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Method of manufacturing semiconductor lasers

Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

Light detection devices and methods of manufacturing the same

Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Methods of forming photo detectors

Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.

Optical network structures for multi-core central processor unit

Growing community of inventors

Daejeon, South Korea

In Gyoo Kim