Samsung Electronics Co., Ltd.

Dongwoo Fine-chem

In-Gi Kim

Hyo-San Lee

Kyoung-hwan Kim

Yong-Sun Ko

Jung-Min Oh

Young-Hoo Kim

Yong-Jun Choi

Seok-Hoon Kim

Tae-Hong Kim

Ji-Hoon Jeong

Jin-Woo Lee

Sang-tae Kim

In-seak Hwang

Ji-Hoon Cha

Dae-Hyuk Chung

Seung-Min Shin

Sung-Hyun Park

Kyong-ho Lee

Seong-min Kim

Sang-won Bae

Mi-Hyun Park

Na-Rim Kim

Chang-Soo Lee

Hyun-Chul Kim

Ji-Won Lee

Kun-Tack Lee

Yong-Jhin Cho

Gyung-Jin Min

Eun-Seok Lee

Il-Sang Lee

Jin-Suk Hong

Myung-Woo Kim

Kuen-Byul Kim

Dae-Bum Park

Soung-Kil Ryu

Seung-Bu Baek

Seo-Hyun Kim

Wook-Tae Kim

Hyung-Jin Lee

Gyu-Ha Jo

Yong-Hyun Cho

Byung-Bok Kang

Seok-Min Kang

Bon-Ok Koo

Sung-Ki Roh

According to an embodiment, a cover glass includes a glass plate forming at least a portion of an electronic device, and a first coat layer deposited on a surface of the glass plate, the first coat layer at least partially including a network structure. The first coat layer includes silicon (Si), oxygen (O), and at least one impurity, and such that Si—O bonds are 80% or more by weight of the first coat layer. A polysilazane-applied coat is laid over one surface of the reinforced glass plate, providing an elegant haze glass cover.

Cover glass and electronic device with the same and method for manufacturing cover glass

A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

Dry cleaning apparatus and dry cleaning method

A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

Compositions for removing photoresist

A chemical liquid supply apparatus includes a nozzle unit including a nozzle arm and an injection nozzle mounted in an end of the nozzle arm, a chemical liquid supply unit including a first chemical liquid tank accommodating a first chemical liquid and a second chemical liquid tank accommodating a second chemical liquid, and supplying the first chemical liquid and the second chemical liquid to the nozzle unit, and a mixer unit provided in the nozzle unit and discharging a process fluid by mixing the first chemical liquid and the second chemical liquid, wherein the mixer unit includes an in-line mixer mixing the first chemical liquid and the second chemical liquid that are continually injected from the chemical liquid supply unit, and a mixer pipe extending from the in-line mixer to the injection nozzle.

Chemical liquid supply apparatus and semiconductor processing apparatus having the same

Methods of manufacturing semiconductor devices using a composition for removing photoresist and methods of removing photoresist from a semiconductor substrate

In a method of inspecting a surface of a substrate, a first surface image of the substrate before loaded into a process chamber may be obtained. The first surface image may be processed to detect a defect on the surface of the substrate. Thus, the surfaces of all of the substrate may be inspected during a process may be performed without transferring the substrates.

Method of inspecting a surface of a substrate and apparatus for performing the same

A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.

Cleaning solution composition and method of cleaning semiconductor device using the same

In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Apparatus and method for removing a photoresist structure from a substrate

In a method of drying an object, a first drying fluid and a second dry fluid may be first heated to form a gas mixture. The gas mixture may be second heated to prevent the mixed gas from condensing. The second heated gas mixture may be filtered to remove impurities from the second heated mixed gas. The filtered mixed gas may be then applied to the object so as to dry the object.

Method of drying an object and apparatus for performing the same

Growing community of inventors

Hwaseong-si, South Korea

In-Gi Kim