National Cheng-Kung University

Metal Industries Research & Development Centre

In-Gann Chen

Chang-Shu Kuo

Steve Lien-Chung Hsu

Chia-Ming Yang

Hung-Tao Chen

Yu-Lin Chen

Chi-Wah Keong

Shih-Wen Tseng

Jenn-Ming Song

Yen-Ting Chen

Chii-Shyang Hwang

Pei-Ying Hsieh

Yung-Tang Nien

Heueh-Jung Lu

Hao-Hsun Chang

Chia-Wei Ma

Hsien-Tse Tung

Po-Tsung Hsieh

Hung-Cheng Chen

Shih-Hsien Liu

Ya-Wen Tsai

Ya-Wen Chuang

Ke-Miao Lu

Han-Hsuan Cheng

A method is provided to fabricate a high-power module. A non-touching needle is used to paste a slurry on a heat-dissipation substrate. The slurry comprises nano-silver particles and micron silver particles. The ratio of the two silver particles is 9:1&#x2dc;1:1. The slurry is pasted on the substrate to be heated up to a temperature kept holding. An integrated chip (IC) is put above the substrate to form a combined piece. A hot presser processes thermocompression to the combined piece to form a thermal-interface-material (TIM) layer with the IC and the substrate. After heat treatment, the TIM contains more than 99 percent of pure silver with only a small amount of organic matter. No volatile organic compounds would be generated after a long term of use. No intermetallic compounds would be generated while the stability under high temperature is obtained. Consequently, embrittlement owing to procedure temperature is dismissed.

Method of fabricating high-power module

A light metal joint filler is provided. The light metal joint filler is formed by uniformly mixing a solvent with a light metal powder and a silver powder, where a powder particle size of the light metal powder is on a micron scale, and a powder particle size of the silver powder is on a nanometer scale or a submicron scale. A metal joining method of the present disclosure includes: coating a joint of two to-be-joined light metal pieces with the light metal joint filler; and hot pressing the two to-be-joined light metal pieces, so that the silver powder is sintered and bonded with the light metal powder and surfaces of the two to-be-joined light metal pieces, and completing joining of the two to-be-joined light metal pieces after the silver powder is condensed.

Light metal joining method and joint filler for same

A high temperature reaction system includes a reaction tube including a heating space, a discharge unit, a cooling unit, a feeding unit and an observation and analysis unit. The discharge unit is disposed opposite to an inlet of the heating space and has a discharge space communicating the heating space, and an observation window and a discharge opening which communicate the discharge space. The cooling unit has a cooling space communicating the discharge opening. The feeding unit includes a carrier holding a sample, and a moving module for moving the carrier and the sample. The observation and analysis unit includes an image capture module and an analysis module for analyzing gas released by the sample.

High temperature reaction system

A chip packaging device is provided, which includes a main body unit, packaging unit and an aligning unit. The main body unit includes a mounting base, holder and a rotational platform. The packaging unit includes upper and lower bonding elements, upper and lower chips and a mask; a vertical axis is at the middle of the upper and the lower bonding elements, and a horizontal axis is above the lower bonding element. The aligning unit includes an aligning detector and a first focusing detector. When the lower chip and the mask are disposed on the lower bonding element, place the liquid sample in the mask and spread a packaging adhesive over the surface thereof; then, remove the mask and use the aligning detector and the first focusing detector to detect the position of the lower chip respectively, such that the chips can be aligned and bonded with each other.

Chip packaging device and alignment bonding method thereof

A method of fabricating a conductive thin film includes the following steps: forming a polymer fiber made of a polymer and a metal precursor distributed in a surface layer near the surface of the polymer fiber; and applying a plasma treatment on the polymer fiber to concurrently etch the polymer and reduce the metal precursor in the surface layer of the polymer fiber. When the plasma treatment is completed, a metal membrane is formed on the surface of the polymer fiber.

Method of fabricating conductive thin film

A method is provided to make a nano-silver paste. An organic acid is used as a protective agent. Silver nitrate is used as a source of silver ions to reduce silver nanoparticles on a surface protected by the organic acid. The particle size of the silver nanoparticle is 45 nanometers. In the other hand, a silver precursor of organic metal is synthesized. The organic metal is cracked at 200 celsius degrees (&#xb0; C.) to fill pores left during sintering. After mixing the silver nanoparticle, the silver precursor and the solvent, the nano-silver paste is obtained. After being heated at 250&#xb0; C. for 30 minutes, the nano-silver paste has a resistance of (3.09&#xb1;0.61)&#xd7;10&#x3a9;&#xb7;cm. By being heated at 250&#xb0; C. and applied with a pressure of 10 MPa to be hot-pressed for 30 minutes for joining copper to copper, the nano-silver paste obtains a bonding strength reaching 36 MPa.

Method of fabricating nano-silver paste having high bonding strength

A method for forming a flexible transparent conductive film includes steps of: (a) electrospinning a first solution, which contains a polymer, a solvent and a metal ion-containing precursor, to form an polymeric fiber onto a soluble substrate; (b) providing energy to reduce the metal ion-containing precursor of the polymeric fiber, so as to form metal seeds on the polymeric fiber; and (c) placing the polymeric fiber together with the soluble substrate into a second solution, such that the soluble substrate dissolves in the second solution to form an electroless-plating bath and such that the polymeric fiber is subjected to electroless plating to form a metal coating from the metal seeds.

Method for forming flexible transparent conductive film

The present invention relates to yttrium aluminum garnet phosphor, a method of preparing the same and a light-emitting diode containing the same. The yttrium aluminum garnet phosphor of the present invention is represented by the following formula (I):(YM)AlSiO&#x2003;&#x2003;(I)wherein, 0.01&#x2266;a&#x2266;0.2, 0&#x3c;b&#x2266;1.2, and M is at least one selected from the group consisting of Ce, Dy, Gd, Eu, Tb, La, Pr, Nd, and Sm.

Yttrium aluminum garnet phosphor, method for preparing the same, and light-emitting diode containing the same

A method for forming well-aligned metallic nanowires includes: (a) providing a substrate formed with a crystal layer thereon; (b) disposing the substrate in such a manner that the crystal layer faces downwardly; (c) applying a metal salt solution, which contains metal ions therein, to the crystal layer on the substrate; and (d) subjecting the metal ions in the metal salt solution on the crystal of TiO2 layer to a reduction treatment, thereby resulting in reduced metal that grows downward toward earth's gravity.

Method for forming metallic nanowires

The present invention pertains to a process for synthesizing nano-scale yttrium aluminum garnet (YAG) fluorescent powders having formula (I):(YR)(AlR)O&#x2003;&#x2003;(I)wherein Rand Rare independently selected from the elements consisting of rare earth metals and transition metals, and each of x and y is independently a value between 0 and 1.5, where the process comprises the steps:

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Tainan, Taiwan

In-Gann Chen