Dongbu Hitek Co., Ltd.

Dongbu Electronics, Co. Ltd.

In-Cheol Baek

Han-Choon Lee

Embodiments relate to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device capable of simplifying a silicide manufacturing process using a photo resist overhang structure. According to embodiments, a surface is subjected to a monochlorobenzene coating processing to cure the surface of the exposed photo resist so as not to react with developing solution and such a processed photo resist is developed to make the lower of the photo resist in the overhang structure so as to form an accurate pattern according to the clear removal of the oxide film, making it possible to simply manufacture the silicide and the non-silicide without performing an etching process by a subsequent cobalt deposition process.

Method for manufacturing semiconductor device

A method for fabricating a semiconductor device is disclosed. The method includes: forming a photoresist film on a semiconductor substrate including a silicide forming region and non-silicide forming region; forming a photoresist pattern as a non-salicide pattern by patterning the photoresist film, so as to cover the non-silicide forming region and open the silicide forming region, with an overhang structure that a bottom is removed more compared to a top; forming a metal film on a top of the photoresist pattern and overall the semiconductor substrate in the silicide forming region; stripping the photoresist pattern and the metal film on the photoresist pattern; and forming a silicide metal film by annealing the metal film remaining on the semiconductor substrate. Therefore, the present invention simplifies a salicide process of a semiconductor device, making it possible to improve yields.

Method for fabricating semiconductor device

A method of manufacturing an image sensor that may restrain the oxidization of a pad. A method of manufacturing an image sensor may include at least one of the following steps: Forming a photodiode structure including a pixel in an active region of a semiconductor substrate. Forming a conductive pad electrically connected the pixel in a peripheral region of the semiconductor substrate, where the peripheral region at least partially surrounds the active region. Forming a passivation layer with an opening exposing the pad on and/or over the photodiode structure. Covering the exposed pad with an etching prevention layer. Forming a color filter on and/or over the passivation layer corresponding to the pixel. Forming a microlens on and/or over the color filter. Removing the etching prevention layer from the pad.

Method for manufacturing image sensor

A method for forming a metal line of a semiconductor device includes forming an interlayer insulation film over a semiconductor substrate, forming a trench for exposing at least a portion of the semiconductor substrate by using a selective etching process, and forming a diffusion barrier layer over the interlayer film and the inner walls of the trench, by using a plasma enhanced atomic layer deposition process in which a high frequency power generator is set to have a frequency of 13.56 MHz. The plasma enhanced atomic layer deposition process is performed with a base pressure in a chamber maintained at 1&#xd7;10to 3&#xd7;10torr.

Method for forming metal line in a semiconductor device

A method for forming a thin film of a semiconductor device, which may include at least one of the following steps: Forming a Tantalum Nitride (TaN) film over a semiconductor substrate by atomic layer deposition. Forming a Tantalum (Ta) film by converting at least a portion of a Tantalum Nitride (TaN) film into Tantalum (Ta) by soaking the TaN film in a diluted HNOsolution.

Method of fabricating a thin film and metal wiring in a semiconductor device

A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate by employing an atomic layer deposition method; and converting a part of the TaN film into a Ta by reacting the TaN film with NOto form a Ta film. The NOis formed by reacting NHwith O.

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Seoul, South Korea

In-Cheol Baek